A 80 kV gas switch triggered by a 17 μJ fiber-optic laser

Wang, Zhiguo; Sun, Fengju; Qiu, Aici; Hu, Long; Yin, Jun; Cong, Peitian; Jiang, Xiaofeng; Wei, Hao; Jiang, Hongyu

doi:10.1063/1.5141924

Cited by 7 publications

(1 citation statement)

References 7 publications

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“…The fast Z-pinch needs very high energy densities with rise time of load current less than 100 ns [2]. It plays a very important role in the fields of intense radiation effect, high energy density physics, inertial confinement fusion, inertial fusion energy, material science under extreme conditions, and laboratory astrophysics [3][4][5], to name a few. Traditionally, a Z-pinch pulsed power driver is based on the µs-class Marx-generator and pulse-forming technology.…”

Section: Introductionmentioning

confidence: 99%

Numerical Analysis of a Single-Stage Fast Linear Transformer Driver Using Field-Circuit Coupled Time-Domain Finite Integration Theory

et al. 2020

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The focus of this paper is numerical analysis on the performance of a newly designed mega-ampere (MA) class single-stage fast linear transformer driver (FLTD) with 24 separate columns in the China Z-pinch driver CZ34. However, the internal structure and media distribution of the FLTD induction cavity is very complicated and the short rise time of the bricks’ discharge current will make spatial discretization much denser, resulting in a dramatic increase in the computational complexity of a 3-D model. In this paper, the electromagnetic (EM) characteristics of the single-stage FLTD with 24-separate columns are investigated based on the time-domain finite integration theory (TD-FIT). The discharge currents of brick capacitors in the circuit model are coupled to the field model as excitations. The grid size of the key components in FLTD cavity are refined by nonuniform grids. To further reduce the number of degrees of freedom (DoFs), the surface impedance boundary condition (SIBC) is used to model good conductors. Measurements and simulation results demonstrate that TD-FIT is effective and accurate in analyzing the EM transients of FLTD. Equivalent inductance of the discharging brick will increase by ~35 nH due to the mutual flux linkage among neighboring bricks when all the 23-bricks are triggered synchronously.

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Section: Introductionmentioning

confidence: 99%

Numerical Analysis of a Single-Stage Fast Linear Transformer Driver Using Field-Circuit Coupled Time-Domain Finite Integration Theory

et al. 2020

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Temperature characteristic of carrier scattering and dark resistivity of semi-insulating GaAs

Tian

Sun

Jing

et al. 2021

Journal of Applied Physics

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The electron mobility and the dark resistivity of undoped semi-insulating GaAs have been calculated theoretically over the temperature range from 5 to 500 K by taking into consideration all indispensable scattering processes, screening effects, and impurities compensation action. The two temperature characteristic curves of electron mobility and dark resistivity both exhibit unimodality. The peak value of the mobility as high as 11.4 × 105 cm2 V−1 s−1 can be achieved at 27 K, which is more than two orders of magnitude greater than that at 300 K. We analyzed the carrier relaxation rate due to scattering by ionized impurities, acoustic deformation potential, piezoelectric, and polar optical phonons. It is found that the unusually thermal characteristic is dominated by ionized impurity scattering, piezoelectric scattering, and polar optical phonon scattering in different temperature ranges, respectively. According to the scattering theory models, the dominant position relationships between the two different carrier scatterings induced by acoustical phonons in two-dimensional GaAs layer and bulk semi-insulating GaAs are discussed, respectively. The peak value of dark resistivity is about 1.29 × 1012 Ω cm at 154 K, which is more than five orders of magnitude greater than that at 300 K. The theoretical results are in good agreement with previously published results. Moreover, the dependence of the peak value of dark resistivity on the deep and shallow donor concentrations are obtained, respectively, and the mechanisms of the dependence are discussed. Understanding of thermal properties of dark resistivity and mobility can be used to optimize GaAs-based electronic and photonic devices’ performance in different temperature regimes.

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Pulse Compression Characteristics of an Opposed-Electrode Nonlinear GaAs Photoconductive Semiconductor Switch at 2 μJ Excitation

Liu

Luo

et al. 2022

IEEE Electron Device Lett.

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A 80 kV gas switch triggered by a 17 μJ fiber-optic laser

Cited by 7 publications

References 7 publications

Numerical Analysis of a Single-Stage Fast Linear Transformer Driver Using Field-Circuit Coupled Time-Domain Finite Integration Theory

Numerical Analysis of a Single-Stage Fast Linear Transformer Driver Using Field-Circuit Coupled Time-Domain Finite Integration Theory

Temperature characteristic of carrier scattering and dark resistivity of semi-insulating GaAs

Pulse Compression Characteristics of an Opposed-Electrode Nonlinear GaAs Photoconductive Semiconductor Switch at 2 μJ Excitation

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