A 71-Gb/s NRZ Modulated 850-nm VCSEL-Based Optical Link

Kuchta, Daniel M.; Rylyakov, Alexander V.; Doany, F. E.; Schow, Clint L.; Proesel, Jonathan E.; Baks, Christian; Westbergh, Petter; Gustavsson, Johan S.; Larsson, Anders

doi:10.1109/lpt.2014.2385671

Cited by 287 publications

(87 citation statements)

References 10 publications

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“…Представляется, что существенное улучшение частотных характеристик ВИЛ ближнего ИК-диапазона в режиме прямой токовой модуляции весьма проблематично. Применение специальных схем выравнивания формы оптического сигнала (equalization) как на передатчике, так и на приемнике позволило достичь рекордной скорости передачи данных 71 Gbit/s [106]. Дальнейшее повышение скорости передачи данных по оптическому каналу связано с применением многоуровневых форма-тов модуляции, таких как амплитудно-импульсная модуляция (pulseamplitude modulation), многотоновая модуляция (discrete multitone modulation), амплитудно-фазовая модуляция без несущей (carrierless amplitude/phase modulation) [107].…”

Section: заключениеunclassified

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Блохин¹,

Малеев²,

Бобров³

et al. 2018

Письма В Журнал Технической Физики

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The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called “vertical-cavity surface-emitting lasers”) under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ∼30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

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Section: заключениеunclassified

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Блохин¹,

Малеев²,

Бобров³

et al. 2018

Письма В Журнал Технической Физики

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“…Consequently, a low threshold gain will lead to a high differential gain. It is well known that the intensity modulation response of single section DFB laser diodes is a second order function with a resonance frequency given by: (1) In which is the confinement factor, V the volume of the active layer, dg/dN the differential (material gain) of the active layer and I-Ith the current minus the threshold current. The resonance frequency can thus be maximized by maximizing /V and dg/dN.…”

Section: Advantages Of Using Inp Membranes On Silicon-on-insulatomentioning

confidence: 99%

“…Both 850nm and 1550 nm VCSELs have been shown capable of 56 Gb/s direct modulation. [1][2]. However, VCSELs have a limited output power of a few mW, making them less suited for longer distance interconnects, their wavelength is not easy to control and they are not easily integrated into a multi wavelength WDM transmitter.…”

Section: Introductionmentioning

confidence: 99%

43 Gb/s NRZ-OOK Direct Modulation of a Heterogeneously Integrated InP/Si DFB Laser

Abbasi

Keyvaninia

Verbist

et al. 2017

J. Lightwave Technol.

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Abstract-We discuss how InP membrane laser diodes, heterogeneously integrated on SOI can be designed for high speed operation and how one can take advantage of the heterogeneous integration. This is illustrated with several static and dynamic characteristics of fabricated 1550nm lasers. We show non-return to zero on-off keying at 43 Gb/s and report link experiments over 2 km of nonzero dispersion shifted fiber with the directly modulated laser diodes.

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“…Frequency and phase remain constant, whereas two different amplitude levels are used to represent the logical values 0 and 1, without a 0 being forced after each 1. Figure 14 shows the effective data rate vs. MMF transmission length for OOK [13,[38][39][40][41][42]. To date, the highest serial data rates demonstrated error-free (BER < 1E-12) using OOK are 71 Gb/s over 7 m [41], 64 Gb/s over 57 m [40], and 60 Gb/s over 107 m [41].…”

Section: Ookmentioning

confidence: 99%

Application of nanophotonics to the next generation of surface-emitting lasers

et al. 2017

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Novel trends and concepts in the design and fabrication of vertical cavity surface-emitting lasers (VCSELs) and their integration in optical networks and implementation in integrated photonics applications are discussed. To serve these goals and match the growing bandwidth demands, significant changes are to be implemented in the device design. New lateral leakage-mediated singlemode VCSELs, including both devices confined by oxide layers and those confined by alloy-intermixed regions, are likely to be good candidates for light sources for the data networks of the future. An overview of the records in VCSEL transmission distances and transmission speeds is discussed in this context.

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A 71-Gb/s NRZ Modulated 850-nm VCSEL-Based Optical Link

Cited by 287 publications

References 10 publications

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

43 Gb/s NRZ-OOK Direct Modulation of a Heterogeneously Integrated InP/Si DFB Laser

Application of nanophotonics to the next generation of surface-emitting lasers

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