A 6T1C dynamic threshold voltage compensation IGZO-GOA circuit for 31-inch AMOLED display with slim border

Xue, Yan; Han, Bing; Wang, Xian; Zhou, Shuai; Chaw, Gary; Fang, Chun‐Hsiung; Wu, Yuan‐Chun

doi:10.36463/idw.2019.amd8-2

Cited by 1 publication

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“…For example, the researchers at Beijing University have developed a top-gate TFT structure instead of a traditional back-channel etch TFT structure [ 11 , 12 ]. The non-overlap between the gate and the source electrode causes the reduction in the parasitic capacitance in the top-gated TFTs [ 13 ]. The introduction of the copper process instead of the aluminum process is a promising method to reduce the RC loading in the displays [ 14 ].…”

Section: Introductionmentioning

confidence: 99%

High-Speed Shift Register with Dual-Gated Thin-Film Transistors for a 31-Inch 4K AMOLED Display

Rong

Lin

et al. 2022

Micromachines

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In this work, a promising dual-gated thin film transistor (TFT) structure has been proposed and introduced in the shift register (SR)-integrated circuits to reduce the rising time. The threshold voltage can be simultaneously changed by the top gate and the bottom gate in the proposed dual-gated TFTs. When the SR circuits start to export the scan signals in the displays, the driving currents in the SR circuits are increased by switching the working station of driving TFTs from the enhancement characterization to the depletion characterization. Subsequently, the detailed smart spice simulation has been used to study the function of the proposed SR circuits. In the next step, the proposed SR circuits have been fabricated in a G4.5 active-matrix organic light-emitting diode manufacture factory. The simulated and experimental results indicate that the shift register pulses with the full swing amplitude can be obtained in the SR circuits. Moreover, in contrast to the conventional SR circuits employing with the single-gated TFTs, it has been found that the rising time of the output signals can be reduced from 3.75 μs to 1.23 μs in the proposed SR circuits with the dual-gated TFTs, thus exhibiting the significant improvement of the driving force in the proposed SR circuits. Finally, we demonstrated a 31-inch 4K AMOLED display with the proposed SR circuits.

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