A 624 V 5 A All‐GaN Integrated Cascode for Power‐Switching Applications

Abstract

An all-GaN integrated cascode device with an output current of 5 A, threshold voltage of +0.65 V and breakdown voltage of 624 V is demonstrated. Compared to the commercial 600 V hybrid GaN plus Si cascode device (TPH3202), the integrated cascode exhibits a significantly reduced delay time when switched at 200 V and 2.7 A. This is attributed to the absence of a Si MOSFET driver, leading to a much smaller input capacitance as indicated by the high voltage capacitance measurements. In addition, the integrated cascode device shows a reduced ringing effect due to monolithic integration. When compared to commercial 600 V standalone GaN devices (GS66502B and GS-065-004), a reduced Miller effect is observed for the integrated cascode when switched under low gate driving current conditions. The results demonstrate the advantages of the cascode device to switch with low gate driving current using cheaper, faster and more efficient gate drivers.