2010 IEEE Radio Frequency Integrated Circuits Symposium 2010
DOI: 10.1109/rfic.2010.5477356
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A 60GHz transformer coupled amplifier in 65nm digital CMOS

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Cited by 28 publications
(7 citation statements)
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“…We can see that the B BW of ~12GHz while pply. This 20% BW is ous publications [2][3][4][5]. wafer show negligible proving the MOScap roduction.…”
Section: B Large Signal Optimizationmentioning
confidence: 85%
See 1 more Smart Citation
“…We can see that the B BW of ~12GHz while pply. This 20% BW is ous publications [2][3][4][5]. wafer show negligible proving the MOScap roduction.…”
Section: B Large Signal Optimizationmentioning
confidence: 85%
“…Due to the low breakdown voltage of advanced MOS transistors probably the most challenging component in this high frequency band is the PA. Recently we have seen PA designs with gain boosting by neutralization use [2][3]. An increase in gain per stage allows a reduction in the number of stages, creating a positive impact on the stability over PVT of the chain.…”
Section: Introductionmentioning
confidence: 99%
“…In these two decades, the published works about MMW PAs are mainly about enhancement of output power and gain with power combining, reduction of passive components and neutralization of the parasitic capacitances with inductive components like transmission line, and the improvement of efficiency by linearization techniques [63][64][65][66][67][68][69][70][71][72].…”
Section: Power Amplifier (Pa)mentioning
confidence: 99%
“…The right-handed part of CRLH T-line comes from the Coplanar Waveguide (CPW) transmission line that connects unit cells, and parasitic capacitance between unit cells and ground.Figure 3.4(b) shows the layout version of this unit cell, where L p is a spiral inductor formed by top metal layer (M6). The thick metal ring around L p serves asground to improve isolation between unit cells and to form a better distribution of ground, as described in[59]. C s is a MOM capacitor constructed with multiple metal layers (M4-M6) in an inter-digit manner for better quality factor at 60GHz range.…”
mentioning
confidence: 99%
“…For differential topology, neutralization technique has been widely used recently[59,[79][80][81] to neutralize the feedback signal by introducing a negative path from drain of one differential transistor to the gate of the other transistor. As shown inFig.…”
mentioning
confidence: 99%