IAS '95. Conference Record of the 1995 IEEE Industry Applications Conference Thirtieth IAS Annual Meeting
DOI: 10.1109/ias.1995.530408
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A 60 V BiCDMOS device technology for automotive applications

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Cited by 6 publications
(2 citation statements)
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“…Abbildung 7.6 zeigt eine mögliche Kombination bei dieser Technologie [345] nahmen (Rekombinationszentren mittels Schwermetallen) gelingt es, inhärente "Fast-Recovery-Dioden" im DMOSFET (FREDFET) zu erreichen. Eine dieser komplexen Technologien ist der BiCDMOS-Prozeß.…”
Section: Laterale Leistungsbauelemente Und Smart-power-elementeunclassified
“…Abbildung 7.6 zeigt eine mögliche Kombination bei dieser Technologie [345] nahmen (Rekombinationszentren mittels Schwermetallen) gelingt es, inhärente "Fast-Recovery-Dioden" im DMOSFET (FREDFET) zu erreichen. Eine dieser komplexen Technologien ist der BiCDMOS-Prozeß.…”
Section: Laterale Leistungsbauelemente Und Smart-power-elementeunclassified
“…[1][2][3][4] They are widely used as switches with a feature of self-protection against shorted loads, over-temperature, and power line disturbance. [5][6][7][8] In the case of automotive application such as in an engine control unit (ECU), the devices operate under a harsh environment. 9,10) Therefore, excellent reliability in hot carrier (HC) degradation and thermal safety operation area (T-SOA) are especially required.…”
Section: Introductionmentioning
confidence: 99%