An ultrahigh‐speed 32 K ×8/×9 TTL bi‐CMOS SRAM with a 5‐ns standard access time was developed using a five‐layer polysilicon/two‐layer aluminum 0.6‐μm bi‐CMOS process with 4.2 × 5.6‐μm2 4‐M SRAM‐class small‐size memory cells, ultrahigh capacity, self‐aligned bipolar electrodes with 18.5‐GHz cutoff frequency and 0.6‐μm/0.7‐μm (nMOS/pMOS) gate‐length MOS transistors. This fast access time was achieved by using center power pin‐out to reduce output noise, a major problem in the TTL SRAM, together with alternated bit line load architecture, a memory array architecture well suited to center power pin‐out. Also used were a bit‐line load circuit for rapid precharging of the bit line and a high‐speed wired‐OR column‐sensing circuit.