2017
DOI: 10.1109/tmtt.2016.2647714
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A 6-GS/s 9.5-b Single-Core Pipelined Folding-Interpolating ADC With 7.3 ENOB and 52.7-dBc SFDR in the Second Nyquist Band in 0.25- $\mu$ m SiGe-BiCMOS

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Cited by 9 publications
(1 citation statement)
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“…Currently, ADCs are predominantly designed in a CMOS process. In fact, compared with metal-oxide-semiconductor field-effect transistor (MOSFET), silicon-germanium (SiGe) heterojunction bipolar transistors (HBT) possess higher transit frequency and superior matching property [7]. In addition, due to its reliability in extreme environmental conditions and inherent tolerance to irradiation effects, it is suitable for special applications such as space exploration [8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…Currently, ADCs are predominantly designed in a CMOS process. In fact, compared with metal-oxide-semiconductor field-effect transistor (MOSFET), silicon-germanium (SiGe) heterojunction bipolar transistors (HBT) possess higher transit frequency and superior matching property [7]. In addition, due to its reliability in extreme environmental conditions and inherent tolerance to irradiation effects, it is suitable for special applications such as space exploration [8][9][10].…”
Section: Introductionmentioning
confidence: 99%