A 6-18 GHz 20 W SPDT switch using shunt discrete PIN diodes

Shigematsu, T.; Suematsu, Noriharu; Takeuchi, Norio; Iyama, Y.; Mizobuchi, Akira

doi:10.1109/mwsym.1997.602847

Cited by 12 publications

(5 citation statements)

References 2 publications

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“…The power handling capability with 0 dB and 1 dB compression was 42.0 dBm and 44.5 dBm, respectively. The P 0dB value is very good agreement with theoretical predicted results from Equation (2), where the maximum current I max is 1.3 A/mm for the developed GaN switch HEMT.…”

Section: Gan Switch Hemt Characterizationsupporting

confidence: 84%

GaN HEMT with AlGaN back barrier for high power MMIC switch application

Ren¹,

Huang²,

Li³

et al. 2015

J. Semicond.

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0.25 m GaN HEMT with AlGaN back barrier for high power switch application has been presented. By introducing AlGaN back barrier, the buffer layer breakdown voltage for the metal-organic chemical vapor deposited AlGaN/GaN hetero-structure on 3-inch SiC substrate showed a considerable increment, which was nearly 4 and 2 of that for the conventional GaN buffer layer and GaN buffer layer with Fe doped, respectively. GaN switch HEMTs with source to drain spacing of 2, 2.5, 3, 3.5 and 4 m were fabricated on the AlGaN/GaN epitaxial material with AlGaN back barrier and estimated off state power handling for the GaN switch HEMTs were 25.0, 46.2, 64.0, 79.2, and 88.4 W, respectively. A demonstrator DC-12 GHz GaN SPDT MMIC switch was designed in reflective series-shunt-shunt configuration based on the GaN HEMT, with a source to drain spacing of 2.5 m. The developed SPDT MMIC switch showed a maximum insertion loss of 1.0 dB and a minimum isolation of 30 dB at a frequency range of DC-12 GHz. A power handling capability of 44.1 dBm was achieved at 10 GHz for the MMIC switch with continuous wave power compression measurement.

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Section: Gan Switch Hemt Characterizationsupporting

confidence: 84%

GaN HEMT with AlGaN back barrier for high power MMIC switch application

Ren¹,

Huang²,

Li³

et al. 2015

J. Semicond.

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show abstract

“…Radio frequency (RF) switches are one of the important components in radar, time division duplex, and wireless communication systems [1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16]. Moreover, reconfigurable and diversity (polarization, pattern, etc.)…”

Section: Introductionmentioning

confidence: 99%

A tri-state SPDT switch using shunt open-end stub resonator for X-band applications

Hasan

Nishiyama

Toyoda

2023

IEICE Electron. Express

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This paper presents a tri-state single-pole double-throw (SPDT) switch for X-band applications. The proposed tri-state SPDT switch uses three PIN diodes to switch among three states; two 1:1 modes and one 1:2 mode. In the 1:1 mode, the input power is only delivered to one of the output ports, but in the 1:2 mode, the input power is distributed evenly to the output ports. The proposed concept provides excellent impedance matching in all three states. Proof of concept is experimentally verified using an X-band prototype. The insertion loss is around 2.0 dB with better than 18-dB isolation in the case of two 1:1 modes. For 1:2 mode, the insertion loss is around 1.9 dB, around 2 dB deviates from the ideal 3-dB power splitting.

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“…Traditionally, p-i-n diode devices with discrete packaging were often integrated for microwave frequency operations. Due to the limitations of wire bonding connections between the components, only shunt topology could be implemented [1]. Although such approaches successfully achieved high power capability, the unavoidable parasitic effects associated with wire bonding technology limited both, frequency of operation as well as operation bandwidth.…”

Section: Introductionmentioning

confidence: 99%

Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks

2020

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In this paper, we propose a new configuration for improving the isolation bandwidth of MMIC single-pole-double-throw (SPDT) passive high-electron-mobility transistor (HEMT) switches operating at millimeter frequency range. While the conventional configuration adopted open-stub loading for compensation of the off-state capacitance, radial stubs were introduced in our approach to improve the operational bandwidth of the SPDT switch. Implemented in 0.15 m GaAs pHEMT technology, the proposed configuration exhibited a measured insertion loss of less than 2.5 dB with better than 30 dB isolation level over the frequency range from 33 GHz to 44 GHz. In terms of the bandwidth of operation, the proposed configuration achieved a fractional bandwidth of 28.5% compared to that of 12.3% for the conventional approach. Such superior bandwidth performance is mainly attributed to the less frequency dependent nature of the radial stubs.

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A 6-18 GHz 20 W SPDT switch using shunt discrete PIN diodes

Cited by 12 publications

References 2 publications

GaN HEMT with AlGaN back barrier for high power MMIC switch application

GaN HEMT with AlGaN back barrier for high power MMIC switch application

A tri-state SPDT switch using shunt open-end stub resonator for X-band applications

Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks

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