A 55 kW Three-Phase Inverter with Si IGBTs and SiC Schottky Diodes

Ozpineci, Burak; Chinthavali, Madhu; Tolbert, Leon M.; Kashyap, Avinash S.; Mantooth, H. Alan

doi:10.1109/apec.2006.1620576

Cited by 24 publications

(13 citation statements)

References 14 publications

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“…Cree has developed 600V/75A SiC Schottky diodes for an ORNL project [8]. Since the ZSI used in this paper has 600V/300A, four 75-A SiC Schottky diodes are employed to replace one 300-A Si diode of 6MBP300RA060.…”

Section: B Hybrid Modules Si Igbts/sic Schottky Diodesmentioning

confidence: 99%

“…An experimental test of the energy losses per turn-off of a 75-A SiC Schottky diode shows that the energy losses of the SiC Schottky diodes are negligible [8].…”

Section: B Hybrid Modules Si Igbts/sic Schottky Diodesmentioning

confidence: 99%

“…Since the ZSI used in this paper has 600V/300A, four 75-A SiC Schottky diodes are employed to replace one 300-A Si diode of 6MBP300RA060. For the 75-A SiC Schottky diode, the forward voltage drop and the series resistance are temperature dependent and their values are given by (24) and (25) [8]. …”

Section: B Hybrid Modules Si Igbts/sic Schottky Diodesmentioning

confidence: 99%

“…Then, the conduction losses of the transistors and diodes are calculated by (8) and (9) and depend on the average and the rms values of the current through the valves.…”

Section: Modeling Of Semiconductor Power Losses Ofmentioning

confidence: 99%

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Z-Source Inverter with SiC Power Semiconductor Devices for Fuel Cell Vehicle Applications

Aghdam

2011

Journal of Power Electronics

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Power electronics is a key technology for electric, hybrid, plug-in hybrid, and fuel cell vehicles. Typical power electronics converters used in electric drive vehicles include dc/dc converters, inverters, and battery chargers. New semiconductor materials such as silicon carbide (SiC) and novel topologies such as the Z-source inverter (ZSI) have a great deal of potential to improve the overall performance of these vehicles. In this paper, a Z-source inverter for fuel cell vehicle application is examined under three different scenarios. 1. a ZSI with Si IGBT modules, 2. a ZSI with hybrid modules, Si IGBTs/SiC Schottky diodes, and 3. a ZSI with SiC MOSFETs/SiC Schottky diodes. Then, a comparison of the three scenarios is conducted. Conduction loss, switching loss, reverse recovery loss, and efficiency are considered for comparison. A conclusion is drawn that the SiC devices can improve the inverter and inverter-motor efficiency, and reduce the system size and cost due to the low loss properties of SiC devices. A comparison between a ZSI and traditional PWM inverters with SiC devices is also presented in this paper. Based on this comparison, the Z-source inverter produces the highest efficiency.

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Section: B Hybrid Modules Si Igbts/sic Schottky Diodesmentioning

confidence: 99%

“…An experimental test of the energy losses per turn-off of a 75-A SiC Schottky diode shows that the energy losses of the SiC Schottky diodes are negligible [8].…”

Section: B Hybrid Modules Si Igbts/sic Schottky Diodesmentioning

confidence: 99%

Section: B Hybrid Modules Si Igbts/sic Schottky Diodesmentioning

confidence: 99%

“…Then, the conduction losses of the transistors and diodes are calculated by (8) and (9) and depend on the average and the rms values of the current through the valves.…”

Section: Modeling Of Semiconductor Power Losses Ofmentioning

confidence: 99%

See 2 more Smart Citations

Z-Source Inverter with SiC Power Semiconductor Devices for Fuel Cell Vehicle Applications

Aghdam

2011

Journal of Power Electronics

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“…SiC schottky diode is superior to Si diode in some characteristics, such as the high-breakdown voltage, the high temperature capability and almost zero reverse-recovery current [7][8][9] It is already verified that the SiC diode has extremely low reverse recovery current and low switching loss characteristics compared to those of the Si diode at the same forward current [10,11]. Many multiple circuits replacing Si diode with SiC diode for more improved performance is introduced in the recent studies [12][13][14][15][16][17][18]. The behavior of SiC diode in the circuit-level is analyzed by a thorough characterization [19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Partial O-state Clamping PWM Method for Three-Level NPC Inverter with a SiC Clamp Diode

Ku¹,

Kim²,

Hyun³

2015

Journal of Electrical Engineering and Technology

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-This paper presents the reverse recovery characteristic according to the change of switching states when Si diode and SiC diode are used as clamp diode and proposes a method to minimize the switching loss containing the reverse recovery loss in the neutral-point-clamped inverter at low modulation index. The previous papers introduce many multiple circuits replacing Si diode with SiC diode to reduce the switching loss. In the neutral-point-clamped inverter, the switching loss can be also reduced by replacing device in the clamp diode. However, the switching loss in IGBT is large and the reduced switching loss cannot be still neglected. It is expected that the reverse recovery effect can be infrequent and the switching loss can be considerably reduced by the proposed method. Therefore, it is also possible to operate the inverter at the higher frequency with the better system efficiency and reduce the volume, weight and cost of filters and heatsink. The effectiveness of the proposed method is verified by numerical analysis and experiment results.

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Potential Applications and Impact of Most-Recent Silicon Carbide Power Electronics in Wind Turbine Systems

Zhang

Liu

2012

Wind Energy Conversion Systems

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A 55 kW Three-Phase Inverter with Si IGBTs and SiC Schottky Diodes

Cited by 24 publications

References 14 publications

Z-Source Inverter with SiC Power Semiconductor Devices for Fuel Cell Vehicle Applications

Z-Source Inverter with SiC Power Semiconductor Devices for Fuel Cell Vehicle Applications

Partial O-state Clamping PWM Method for Three-Level NPC Inverter with a SiC Clamp Diode

Potential Applications and Impact of Most-Recent Silicon Carbide Power Electronics in Wind Turbine Systems

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