A 50-V 50-MHz High-Noise-Immunity Capacitive-Coupled Level Shifter With Digital Noise Blanker for GaN Drivers

Qin, Yao; Ming, Xin; Lin, Zhiyi; Ye, Zi-Kai; Shi, Jiawei; Zhuang, Chun-Wang; Li, Zhaoji; Zhang, Chao

doi:10.1109/tcsi.2023.3249472

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Gate Driver and Level Shifter1

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“…Further details to the design and a schematic of the HS driver can be found in [16]. The design of the level shifter is simple, although there are already more complex ones in GaN [13,15,[19][20][21].…”

Section: Gate Driver and Level Shiftermentioning

confidence: 99%

Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters

Basler,

Mönch,

Reiner

et al. 2024

Electronics

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In this article, a fully monolithically integrated GaN power stage with a half-bridge, driver, level shifter, dead time and voltage mode control for 48 V DC–DC converters is proposed and analyzed. The design of the GaN IC is presented in detail, and measurements of the single function blocks and the DC–DC converter up to 48 V are shown. Finally, considerations are given on a life cycle assessment with regard to the GaN power integration. This GaN power IC or stage demonstrates a higher level of integration, resulting in a reduced bill of materials and therefore lower climate impact.

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