A 5 nm Thick Ultra-Thin Double-Gated Poly Si TFT Using Si2H6 as a Source Gas

Ueda, Tomomasa; Komiya, H.; Ashida, T.; Miyake, Ryotaro

doi:10.7567/ssdm.1990.ln-se-2

Extended Abstracts of the 1990 International Conference on Solid State Devices and Materials 1990

DOI: 10.7567/ssdm.1990.ln-se-2

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A 5 nm Thick Ultra-Thin Double-Gated Poly Si TFT Using Si2H6 as a Source Gas

Tomomasa Ueda¹,

H. Komiya²,

T. Ashida³

et al.

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A 5 nm Thick Ultra-Thin Double-Gated Poly Si TFT Using Si2H6 as a Source Gas

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