A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-<i>V</i>
                  <sub>MIN</sub> Applications

Chang, Tsung-Yung Jonathan; Chen, Yen-Huei; Chan, Wei-Min; Cheng, Hu; Wang, Po-Sheng; Lin, Y. C.; Fujiwara, Haruhiko; Lee, Robin; Liao, Haijun; Wang, Ping-Wei; Yeap, Geoffrey; Li, Quincy

doi:10.1109/jssc.2020.3034241

Cited by 18 publications

(5 citation statements)

References 15 publications

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“…Extreme ultraviolet lithography (EUVL) is already being used for high volume manufacturing of semiconductor devices in recent years and has been a major drive in the advancement of these devices into smaller pattern sizes. [1][2][3][4][5][6] However, there are still some issues in EUVL that remain and require close attention. The occurrence of stochastic or random defects has been reported as a EUVL-specific issue and has been a research focus in the last few years.…”

Section: Introductionmentioning

confidence: 99%

Photoresist stochastic defect generation depending on alkyl chain length and concentration of tetraalkylammonium hydroxide in alkali aqueous developer

Harumoto¹,

Santos²,

Santillan³

et al. 2023

Jpn. J. Appl. Phys.

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The effects of photoresist dissolution on randomly occurring (“stochastic”) pattern defects in extreme ultraviolet (EUV) lithography were investigated. Specifically, the effects of the alkali concentration of two developers of different alkyl chain lengths; tetramethylammonium hydroxide (TMAH) and tetrabutylammonium hydroxide (TBAH) on stochastic defect generation were investigated for two typical EUV photoresist. In the case of the PHS-type photoresist, results show that stochastic defect generation was almost the same regardless of developer type, given the same developer concentration. For the hybrid-type photoresist, a decrease in stochastic defects was found with the application of the longer alkyl chain length TBAH developer. Results also suggest the existence of an optimum developer concentration. Such optimum developer concentration is considered to be affected by the balance between polarity and non-polarity of the photoresist and developer components.

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Section: Introductionmentioning

confidence: 99%

Photoresist stochastic defect generation depending on alkyl chain length and concentration of tetraalkylammonium hydroxide in alkali aqueous developer

Harumoto¹,

Santos²,

Santillan³

et al. 2023

Jpn. J. Appl. Phys.

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“…The resolution of photoresist materials used for semiconductor lithography has been improved and will continue to be improved to meet the market demands of highly integrated semiconductor devices. [1][2][3][4][5][6][7] However, stochastic defects such as line bridges and breaks, which are randomly generated, become the new issues on sub-20 nm half-pitch patterns. [8][9][10][11][12][13][14][15] The cause of stochastic defects is assumed to be the small and insufficient number of photons delivered to the photoresist film (compared with that in ArF immersion) [15][16][17][18] or the effect of the molecular weight of the photoresist polymer.…”

Section: Introductionmentioning

confidence: 99%

Dependence of photoresist dissolution dynamics in alkaline developers on alkyl chain length of tetraalkylammonium hydroxide

Harumoto

SANTILLAN

Itani

et al. 2022

Jpn. J. Appl. Phys.

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Extreme ultraviolet (EUV) lithography is already being applied to the high-volume manufacturing of semiconductor devices. Although EUV lithography has enabled fine pitch scaling, such sub-20-nm-order fabrication has also imposed the issue of stochastic defects (in the form of randomly generated line bridges and breaks). To resolve such an issue, understanding the development process is essential. In this study, the dissolution dynamics of three types of EUV photoresist were investigated for four types of alkaline developer using a quartz crystal microbalance (QCM) method to clarify the swelling and dissolution kinetics during photoresist development. In experiments, tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH), and tetrabutylammonium hydroxide (TBAH) aqueous solutions were used as developers. Poly(4-hydroxystyrene) (PHS)-type, acryl-type, and hybrid-type photoresists were examined. The effect of the alkyl chain length of tetraalkylammonium cations depended on the type of photoresist. The dissolution dynamics depended on the combination of types of photoresist and developer.

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“…Thus, the peripheral and built-in write assist approaches came into being. For example, some references apply peripheral assists such as negative bitline [13,14], wordline boost [15,16], and lowering VDD [17] based on the traditional 6T cell. Still, these SRAM cells cannot support bit-interleaving, which is critical to solving the multi-bit soft error issue.…”

Section: Introductionmentioning

confidence: 99%

A two-dimension half-select free 12T SRAM cell with enhanced write ability and read stability for bit-interleaving architecture

Yin

Jia

et al. 2022

IEICE Electron. Express

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This paper proposes a two-dimension half-select free 12T SRAM cell suitable for the bit-interleaving structure. The proposed cell utilizes a data-aware power-cutting method and a decoupled read port as built-in assists to enhance the write margin (WM) and read static noise margin (RSNM) separately. In addition, it realizes two-dimension half-select (HS) free via two technologies, helping bit-interleaving architecture minimize the occurrence of multi-bits soft errors effectively. First, a cross-pointactivated wordline successfully isolates the HS disturb in row and column dimensions. Second, a spare pull-up PMOS improves the robustness of column-dimension HS cells, which is lacking by the previous power-cutting structures. Monte Carlo simulations based on SMIC 55nm process confirm the robustness of row and column HS cells. The 12T cell supports a minimum VDD of 0.4V with the proposed methods, 0.3V less than the 6T cell. It improves the WM and RSNM by 2.9× and 14.17× compared to the 6T cell at 0.4V. Meanwhile, it reduces the write power consumption, read power consumption, and leakage power consumption by 52.2%, 4.5%, and 27.7%, respectively, than Chang10T cell at 0.7V.

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A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V _MIN Applications

Cited by 18 publications

References 15 publications

Photoresist stochastic defect generation depending on alkyl chain length and concentration of tetraalkylammonium hydroxide in alkali aqueous developer

Photoresist stochastic defect generation depending on alkyl chain length and concentration of tetraalkylammonium hydroxide in alkali aqueous developer

Dependence of photoresist dissolution dynamics in alkaline developers on alkyl chain length of tetraalkylammonium hydroxide

A two-dimension half-select free 12T SRAM cell with enhanced write ability and read stability for bit-interleaving architecture

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A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V MIN Applications

Cited by 18 publications

References 15 publications

Photoresist stochastic defect generation depending on alkyl chain length and concentration of tetraalkylammonium hydroxide in alkali aqueous developer

Photoresist stochastic defect generation depending on alkyl chain length and concentration of tetraalkylammonium hydroxide in alkali aqueous developer

Dependence of photoresist dissolution dynamics in alkaline developers on alkyl chain length of tetraalkylammonium hydroxide

A two-dimension half-select free 12T SRAM cell with enhanced write ability and read stability for bit-interleaving architecture

Contact Info

Product

Resources

About

A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V _MIN Applications