A 5 kV nanosecond-risetime pulse generator gating an electro-optical shutter

Georgi, Katrin; Flemming, R; Krozer, Viktor

doi:10.1088/0022-3735/17/3/010

J. Phys. E: Sci. Instrum.

1984

DOI: 10.1088/0022-3735/17/3/010

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A 5 kV nanosecond-risetime pulse generator gating an electro-optical shutter

Katrin Georgi¹,

R Flemming²,

Viktor Krozer³

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Cited by 4 publications

(2 citation statements)

References 8 publications

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“…FIG 4 shows a calibration measurement of the contrast at f=24. 4 MHz, normalized to the dc signal. The observed signal is generated by an ion undergoing micromotion, the amplitude of which was determined before and after with a photomultiplier tube (PMT).…”

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confidence: 99%

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Note: An avalanche transistor-based nanosecond pulse generator with 25 MHz repetition rate

Beev

Keller

2017

Review of Scientific Instruments

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We have developed an avalanche transistor-based pulse generator for driving the photocathode of an image intensifier, which comprises a mainly capacitive load on the order of 100 pF. The circuit produces flat-top pulses with rise time of 2 ns, FWHM of 10 ns and amplitude of tens of V at a high repetition rate in the range of tens of MHz. The generator is built of identical avalanche transistor sections connected in parallel and triggered in a sequence, synchronized to a reference rf signal. The described circuit and mode of operation overcome the power dissipation limit of avalanche transistor generators and enable a significant increase of pulse repetition rates. Our approach is naturally suited for synchronized imaging applications at low light levels. The pulse repetition rate is another property of generators that plays an important role in some applications. High repetition rates of ≥20 MHz have been reported for circuits using vacuum tubes [3] and step recovery diodes [11]. One limiting factor in avalanche transistor circuits based on the basic triggered-switched capacitance-discharge topology [1] is the rate at which the energy storage element (lumped or distributed capacitance) at the collector can be recharged. Higher rates are achievable by replacing the charging resistor with a more complex passive [9] [12] or active circuit [10]. Eventually, another limitation arises due to power dissipation in the transistors. It can be mitigated to some extent by heat-sinking, but the pulse rates are still practically limited to a few MHz in continuous operation [10].The circuit presented in this work (German patent application 10 2017 125 386.6 filed on 10/30/2017) (FIG 1) overcomes both the recharging and dissipation limits. It is based on multiple avalanche transistor sections connected in parallel to the same load and triggered sequentially. A similar principle for increasing the pulse repetition rate of thyratron-based generators has been demonstrated [13], but without the provisions for synchronization detailed in our work. The pulse generator is designed for a specific application: driving the photocathode of a fast-gating image intensifier [14] for synchronized imaging of the ion micromotion in an rf trap [15] at a frequency of about f=25 MHz. Micromotion is a generally unwanted driven oscillation which occurs whenever a trapped ion is displaced from the rf node. We determine its amplitude via the photon-correlation technique, which makes use of the fluorescence modulation due to the 1st-order Doppler effect on a strongly allowed optical transition [16], [17].

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confidence: 99%

“…Generators of nanosecond-scale pulses of voltage or current are used to drive electro-optical devices such as diode lasers [1], Pockels cells [2], electro-optical modulators [3], and image intensifiers [4]. Bipolar transistors operated in avalanche breakdown mode are commonly used to construct such generators [1] [4] [5] [6] [7] [8] [9] [10].…”

mentioning

confidence: 99%

Note: An avalanche transistor-based nanosecond pulse generator with 25 MHz repetition rate

Beev

Keller

2017

Review of Scientific Instruments

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Dynamics of high n molecular Rydberg states with application to mass analyzed threshold ionization spectroscopy

Zhang

Smith

Knee

1993

The Journal of Chemical Physics

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Studies are performed which measure the lifetime of very high lying molecular Rydberg states which play a central role in high resolution threshold ionization spectroscopy. The molecular systems investigated are styrene, phenol, and phenanthrene as well as the atomic iron system for comparison. It is shown that the lifetimes of the highest lying levels are determined not by intramolecular nonradiative processes but by intermolecular Rydberg–ion or Rydberg–Rydberg interactions. Under low fluence laser excitation, the highest lying Rydberg states are observed to have a lifetime greater than 25 μs but under high fluence the observed lifetime is ∼4 μs. The long Rydberg lifetimes are utilized to implement a simplified spectrometer for mass analyzed threshold ionization (MATI) spectroscopy.

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High-speed, high-voltage pulse generation using avalanche transistor

Gou

Liu

Bai

et al. 2016

Review of Scientific Instruments

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In this work, the conduction mechanism of avalanche transistors was demonstrated and the operation condition for generating high-speed pulse using avalanche transistors was illustrated. Based on the above analysis, a high-speed and high-voltage pulse (HHP) generating circuit using avalanche transistors was designed, and its working principle and process were studied. To improve the speed of the output pulse, an approach of reducing the rise time of the leading edge is proposed. Methods for selecting avalanche transistor and reducing the parasitic inductance and capacitance of printed circuit board (PCB) were demonstrated. With these instructions, a PCB with a tapered transmission line was carefully designed and manufactured. Output pulse with amplitude of 2 kV and rise time of about 200 ps was realized with this PCB mounted with avalanche transistors FMMT417, indicating the effectiveness of the HHP generating circuit design.

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A 5 kV nanosecond-risetime pulse generator gating an electro-optical shutter

Cited by 4 publications

References 8 publications

Note: An avalanche transistor-based nanosecond pulse generator with 25 MHz repetition rate

Note: An avalanche transistor-based nanosecond pulse generator with 25 MHz repetition rate

Dynamics of high n molecular Rydberg states with application to mass analyzed threshold ionization spectroscopy

High-speed, high-voltage pulse generation using avalanche transistor

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