Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting
DOI: 10.1109/bipol.1994.587900
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A 40 volt silicon complementary bipolar technology for high-precision and high-frequency analog circuits

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Cited by 9 publications
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“…The current gain ( ), early voltage ( ), collectoremitter breakdown voltage ( ), and junction capacitance for the NPN/PNP devices are listed in Table I. The higher PNP is attributed to the reduced susceptibility to avalanche breakdown [30]. It is to be noted that unlike many complementary processes, VIP-3 process offers PNP being 77% to that of the NPN , attributed mainly to p-well process design and optimization.…”
Section: A Vip-3mentioning
confidence: 99%
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“…The current gain ( ), early voltage ( ), collectoremitter breakdown voltage ( ), and junction capacitance for the NPN/PNP devices are listed in Table I. The higher PNP is attributed to the reduced susceptibility to avalanche breakdown [30]. It is to be noted that unlike many complementary processes, VIP-3 process offers PNP being 77% to that of the NPN , attributed mainly to p-well process design and optimization.…”
Section: A Vip-3mentioning
confidence: 99%
“…SOI wafers make the process simpler, i.e., no n-wells are needed for the PNP device isolation, and the device size and parasitic capacitances are reduced. The use of trenches and SOI does increase the wafer cost and hence many junction isolated processes made in bulk wafers have also been reported [17], [23], [29], [30], [32], [34], [38].…”
Section: Review Of Complementary Bipolar Technologiesmentioning
confidence: 99%
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“…[3] and IC kit parts all built in the high speed complementary bipolar VIP-3 process [4]. Although designed for 2.5amps, the breadboard prototype was tested at 3 amps to demonstrate functionality.…”
Section: Test Resultsmentioning
confidence: 99%