A 40 M–1000 MHz 77.2‐dB spurious free dynamic range CMOS RF variable gain amplifier for digital TV tuner ICs

Kwon, Kuduck

doi:10.1002/cta.1979

Cited by 10 publications

(5 citation statements)

References 14 publications

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“…A modified FF OPAMP topology with a combined stage (Version 3), shown in Fig. 2(c), was also introduced to address the two issues [10], [11]. The modified topology of Version 3 combines a high-frequency FF path with the second stage of the low-frequency twostage amplifier path.…”

Section: High-frequency Ff Pathmentioning

confidence: 99%

A 2.4/5 GHz Dual-Band Low-Noise and Highly Linear Receiver With a New Power-Efficient Feedforward OPAMP for WiFi-6 Applications

Yun,

Cho,

et al. 2023

IEEE Access

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This paper presents a 2.4/5 GHz dual-band low-noise and highly linear receiver (RX) for IEEE 802.11a/b/g/n/ac/ax applications. The RX employs an RF front-end architecture composing a balunlow-noise transconductance amplifier, current-mode passive mixers, and transimpedance amplifiers (TIAs) to achieve compactness, low noise, and high linearity. A novel power-efficient feedforward operational amplifier architecture was also implemented in the TIA design to achieve the target RX error vector magnitude (EVM) of less than −35 dB with modulation and coding scheme 11 and 1024 quadrature amplitude modulation. Fabricated in a 22-nm SOI CMOS process, the RX achieved noise figures of 2.1/4.2 dB, in-band input-referred third-order intercept points of −11.8/−7.5 dBm, EVMs of −46.4/−44.6 dB for the 2.4/5 GHz bands, respectively. It drew a bias current of 21 mA from a nominal supply voltage of 0.8 V. The active die area was 0.65 mm 2 .

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Section: High-frequency Ff Pathmentioning

confidence: 99%

A 2.4/5 GHz Dual-Band Low-Noise and Highly Linear Receiver With a New Power-Efficient Feedforward OPAMP for WiFi-6 Applications

Yun,

Cho,

et al. 2023

IEEE Access

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“…In reality, the operational amplifier (op-amp)based TIAs have been widely used owing to their low Z IN ,TIA with relatively small current consumption. A feedforward (FF) op-amp presents relatively inherent wideband characteristic, as an intrinsic zero from the FF path compensates the pole [26], [27]. However, the input impedance of the TIA is still not maintained, as the BB frequency increases because of the limited gain-bandwidth product of the op-amp.…”

Section: Wideband Transimpedance Amplifiermentioning

confidence: 99%

RF Receiver Front-End Employing IIP2-Enhanced 25% Duty-Cycle Quadrature Passive Mixer for Advanced Cellular Applications

Han

Kwon

2020

IEEE Access

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This paper proposes a second-order input-referred intercept point (IIP2)-enhanced 25% duty-cycle local oscillator (LO) quadrature passive mixer configuration with developing a wideband radio frequency (RF) receiver front-end, suitable for 4G and 5G new radio (NR) sub-6 GHz applications. By combining mixer switches operated by several combinations of quadrature-phase RF and LO signals, the inherent second-order nonlinear characteristics produced by the asymmetric factors of the mixer are greatly improved without any additional calibration process. This second-order linearity improvement is theoretically analyzed in terms of the 25% duty-cycle mixing operations, and is compared to the linearity characteristic observed in the conventional mixer design. To validate the IIP2 performance improvement, a wideband RF receiver front-end with the proposed mixer design is fabricated in a 65-nm CMOS technology. The implemented receiver front-end incorporates a wideband low noise amplifier with a polyphase filter, the proposed quadrature passive mixers, wideband transimpedance amplifiers, and 25% duty-cycle LO circuitry. The performance is characterized mainly in the long-term evolution and 5G NR frequency bands, which range from 1800 MHz to 2700 MHz. The demonstrated design achieves approximately 16 dB higher mean values of the out-of-band (OB) IIP2s compared to a conventional design approach without calibration. The design also attains conversion gains greater than 43 dB, double-sideband noise figures less than 4.4 dB, OB IIP3s greater than −1.52 dBm, and OB input P1dB greater than −23.1 dBm, for all measured frequency bands even in the presence of transmitter blockers. The proposed configuration, excluding the LO circuitry, consumes a bias current of 17.4 mA with a nominal supply of 1.2 V. The active area of the proposed implemented design is 0.6 mm 2 .

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“…To realize this, an effective gain control method with fine resolution is required for an RF front-end (FE) of the wideband RX to optimally control RF gain with respect to various interferer powers. This will minimize noise at the minimum input signal power as well as the signal distortion at a high power level [1]. Several RF variable gain amplifier topologies have been reported using different techniques.…”

Section: Introductionmentioning

confidence: 99%

“…Several RF variable gain amplifier topologies have been reported using different techniques. Generally, RF gain control mechanisms are performed by using Manuscript a variable transconductance of transistors [2], a current-steering technique [2], [3], a variable load resistance [2], [4], and an operational-amplifier based method [1]. However, these methods can degrade not only noise and matching performance, but also limit the bandwidth (BW) due to increased parasitic to achieve fine gain resolution.…”

Section: Introductionmentioning

confidence: 99%

A Wideband Receiver Front-End Employing New Fine RF Gain Control Driven by Frequency-Translated Impedance Property

Kwon

Han²,

Nam³

2015

IEEE Microw. Wireless Compon. Lett.

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A new gain control methodology employing frequency-translated (FT) impedance property is proposed for RF amplifiers. By adaptively controlling the baseband impedance through the FT property, fine RF gain control can be achieved without degradation in the RF characteristics such as noise figure (NF), gain, input matching, and bandwidth. To verify the proposed method, a wideband receiver (RX) front-end (FE) with the fine RF gain control has been designed for 2G/3G/4G cellular applications. The implemented RX FE consists of a wideband capacitor cross-coupled common-gate low-noise amplifier, a 25% duty cycle passive mixer with baseband impedance array, a baseband transconductor with variable input capacitance, and a trans-impedance amplifier.The RX FE was fabricated in a 65 nm CMOS process. It has a conversion gain from 26 dB to 42 dB with 1 dB gain resolution, and achieves a minimum NF lower than 3.3 dB, out-of-band IIP3 of , and IIP2 of more than 56 dBm. It draws an average current of 14.8 mA from a 1.2 V supply voltage.

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A 40 M–1000 MHz 77.2‐dB spurious free dynamic range CMOS RF variable gain amplifier for digital TV tuner ICs

Cited by 10 publications

References 14 publications

A 2.4/5 GHz Dual-Band Low-Noise and Highly Linear Receiver With a New Power-Efficient Feedforward OPAMP for WiFi-6 Applications

A 2.4/5 GHz Dual-Band Low-Noise and Highly Linear Receiver With a New Power-Efficient Feedforward OPAMP for WiFi-6 Applications

RF Receiver Front-End Employing IIP2-Enhanced 25% Duty-Cycle Quadrature Passive Mixer for Advanced Cellular Applications

A Wideband Receiver Front-End Employing New Fine RF Gain Control Driven by Frequency-Translated Impedance Property

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