A 4 kV Silicon Carbide solid-state fault current limiter

Saadeh, Osama; Johnson, E.; Saadeh, Mahmood; Mejía, Andrés Escobar; Schirmer, Christopher; Rowden, Brian; Mantooth, Alan; Balda, Juan Carlos; Ang, Simon S.

doi:10.1109/ecce.2012.6342217

Cited by 14 publications

(5 citation statements)

References 6 publications

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“…A SiC PIN diode, which can provide reverseblocking voltage capabilities up to 10 kV, is connected in series with the SGTO as illustrated in Fig. 1 (a) [6]. PSP and NSP are the positive and negative switching positions for conducting currents in both directions.…”

Section: Topology Selection For Dc-dc Convertermentioning

confidence: 99%

“…A positive pulse current flow from the gate is needed to turn on the SGTO and a negative pulse current flow from the gate is needed to turn off the SGTO. The custom built SGTO gate driver boards which have 10-kV galvanic isolation capability are described in [6]. There is one turn-on gate driver board and one turn-off gate driver board for each switching position.…”

Section: Topology Selection For Dc-dc Convertermentioning

confidence: 99%

“…The paper is thus organized as follows. The process and considerations for designing the unique SiC SSFCL based on SiC super gate turn-off thyristors (SGTOs) are addressed in Section II [6]. The SSFCL control concept is briefly explained in Section III using Matlab/Simulink TM simulations.…”

Section: Introductionmentioning

confidence: 99%

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A silicon carbide fault current limiter for distribution systems

Liu

Farnell

Zhang

et al. 2014

2014 IEEE Energy Conversion Congress and Exposition (ECCE)

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Increasing load densities are leading to higher fault currents that may exceed the ratings of current circuit breakers. In addition, computer-controlled equipment is more susceptible to power supply disturbances of relatively long durations. So, there is a need for a new piece of equipment which is able to interrupt fault currents before reaching their first maximum peak isolating very fast faulted sections of a distribution system. Solid-state fault current limiters (SSFCL) have been proposed as a solution to accomplish the above, and thus, as a substitute for slow-operating electromechanical circuit breakers. The design of a silicon carbide fault current limiter with high voltage blocking capability and the subsequent testing at a 15-kV test facility are addressed in this paper. The semiconductor devices of this series-connected SSFCL are custom packaged silicon carbide super gate turnoff thyristors and SiC PIN diodes. The 4.16-kV experimental tests illustrate the performance of the proposed SSFCL and demonstrate the potential for deploying them in distribution systems.

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Section: Topology Selection For Dc-dc Convertermentioning

confidence: 99%

Section: Topology Selection For Dc-dc Convertermentioning

confidence: 99%

See 1 more Smart Citation

A silicon carbide fault current limiter for distribution systems

Liu

Farnell

Zhang

et al. 2014

2014 IEEE Energy Conversion Congress and Exposition (ECCE)

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“…The potential applications of SSCBs in low voltage DC include commercial and naval vessels [1], data centers [56], aviation power distribution [57], battery protection [58], Photo-Voltaic (PV) systems [59], power converter protection [60], Electric Vehicle (EV) charging infrastructure [61], etc. Applicable MVDC power systems include railway power systems [62], electric shipboard requiring high voltage and high power.…”

Section: Introductionmentioning

confidence: 99%

A Review of Thyristor Based DC Solid-State Circuit Breakers

Song¹,

Cairoli²,

Du³

et al. 2021

IEEE Open J. Power Electron.

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Characterized by ultra-fast and arc-free fault clearing, solid state circuit breakers (SSCBs) are getting increasing popularity with the latest development of advanced power semiconductor devices, like the silicon carbide (SiC) MOSFETs. On the other hand, the mature and cost-effective thyristor technology exhibits the beneficial features of low conduction losses, high surge current capability, bidirectional voltage blocking capability, etc., making it a very attractive candidate for SSCB development. However, the conventional thyristors (silicon controlled rectifiers) have no current turn-off capability and need some auxiliary circuits (e.g. LC resonant circuit) or special topology (e.g. Z-source breakers) to be applied in SSCBs. Meanwhile, some active turn-off thyristors (like integrated gate-commutated thyristors, emitter turn-off thyristors, etc.) are specially modified to have current turn off capability, and better suitable for SSCBs. This paper reviews and studies the SSCBs based on the conventional or active turn-off thyristors. The design challenges and performance comparison of SSCBs with different thyristor technologies are also discussed.

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“…Thus, a significant difference between real-time power loss and normal power loss is an indication that there are some problems. Since all of the input and output parameters of the whole system for the parallel-connected power module system can be measured or detected accurately, the electrical operating point can be tracked from the large-scale power module terminal measurements by measuring an individual semiconductor [15][16][17][18]. This method is feasible in practice without any internal detecting and intrusion; experimental tests have verified the viability of this approach.…”

Section: Introductionmentioning

confidence: 99%

Power Loss Prediction for Aging Characteristics and Condition Monitoring for Parallel‐Connected Power Modules Using Nonlinear Autoregressive Neural Network

Yang

et al. 2019

Complexity

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Power modules connected in parallel may have different electrothermal performance variances resulting from aging because of the nonuniform rate of degradation; different electrothermal performance variances mean different current sharing, different junction temperature, and power losses, which will directly influence the overall characteristics of them. Thus, it is essential to monitor the condition and evaluate the degradation grade to improve the reliability of large-scale power modules. In this paper, the impact of thermal resistance difference on current sharing, junction temperature, and power loss of parallel-connected power modules has been discussed and analyzed. Additionally, a methodology is proposed for condition monitoring and evaluation of the power modules without intruding them by recognizing the increase in external power loss due to internal degradation from aging. In this method, power modules are deemed as a whole system considering only external factors associated with them, all important electrical and thermal parameters are classified as the inputs, and power loss is considered as the output. Firstly, power dissipation is predicted by models using NARX (nonlinear autoregressive with exogenous input) neural network. Then, a monitoring method is illustrated based on the prediction model; a reasonable criterion for the error between the normal and the predicted real-time power loss is established. Finally, the real-time condition and the degradation grade of aging can be evaluated so that the operator can take suitable operating measures by means of this approach. Experimental results validated the effectiveness of the proposed methodology.

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A 4 kV Silicon Carbide solid-state fault current limiter

Cited by 14 publications

References 6 publications

A silicon carbide fault current limiter for distribution systems

A silicon carbide fault current limiter for distribution systems

A Review of Thyristor Based DC Solid-State Circuit Breakers

Power Loss Prediction for Aging Characteristics and Condition Monitoring for Parallel‐Connected Power Modules Using Nonlinear Autoregressive Neural Network

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