A 4.2-mW 6-dB Gain 5&amp;#x2013;65-GHz Gate-Pumped Down-Conversion Mixer Using Darlington Cell for 60-GHz CMOS Receiver

Lin, Kaiqi; Chiou, Hwann-Kaeo; Chien, Kuan-Hsiu; Yang, Tsung‐Yu; Wu, Po-Chang; Ko, Chun-Lin; Juang, Ying‐Zong

doi:10.1109/tmtt.2013.2250514

Cited by 26 publications

(17 citation statements)

References 20 publications

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“…As suggested earlier, the cascade amplifier can obtain a better NF than the Darlington cell. Because, the Darlington cell enhances fT and current gain which is equivalent to the bias current, the Darlington cell cascade amplifier displays better gain in comparison to the cascade amplifier [1]. In this paper Darlington amplifier is used to design LNA to increase the gain and lower down the NF and observed NF is 7.1-8.2dB [1].…”

Section: Resultsmentioning

confidence: 97%

“…The cascode architecture has been suggested to bring a significant amount of isolation of inputoutput. In the next, the transistor M2 separates another component Miller capacitance [1]- [10]. Here, Input Impedance has been shown to be derived from utilizing the source degeneration inductor Ls.…”

Section: Basic Staructure Of Lnamentioning

confidence: 99%

“…Currently, expanding use of high data rate wireless communication systems, high resolution radars, millimeter-wave (mm-wave) trans-receivers, medical devices and other radio communication systems have highlighted the applications of low noise amplifier (LNA) to achieve better sensitivity and low noise figure [1]- [10]. In recent, based on the demand for requirement to amplify very week signal, low noise amplifier (LNA) has been used like signal coming from a satellite [1]- [10]. Power of satellite is very limited and designers want to pick up a 20 watt signal from miles to miles away.…”

Section: Introductionmentioning

confidence: 99%

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Low Noise Amplifier using Darlington Pair At 90nm Technology

Singh¹,

Mehra²

2018

IJECE

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<p class="Abstract"><span>The demand of low noise amplifier (LNA) has been rising in today’s communication system. LNA is the basic building circuit of the receiver section satellite. The design concept demonstrates the design trade off with NF, gain, power consumption. This paper reports on with analysis of wideband LNA. This paper shows the schematic of LNA by using Darlington pair amplifier. This LNA has been fabricated on 90nm CMOS process. This paper is focused on to make comparison of three stage and single stage LNA. Here, the phase mismatch between these patameters is quantitavely analyzed to study the effect on gain and noise figure (NF). In this paper, single stage LNA has shown the 23 dB measured gain, while the three stages LNA has demonstrated 29 dB measured gain. Here, LNA designed using darlington pair shows low NF of 3.3-4.8 dB, which comparable to other reported single stage LNA designs and appreciably low compared to the three stages LNA. Hence, findings from this paper suggest the use of single stage LNA designed using Darlington pair in transceiver satellite applications.</span></p>

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Section: Resultsmentioning

confidence: 97%

Section: Basic Staructure Of Lnamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Low Noise Amplifier using Darlington Pair At 90nm Technology

Singh¹,

Mehra²

2018

IJECE

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“…Thus, a broadband performance is achieved. In [134], a Darlington cell and a wideband Lange coupler, which is composed of the microstrip-line, constitute the mixer. The proposed mixer has a measured CG of 6 dB with a power consumption of 4.2 mW.…”

Section: Mixermentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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Abstract:In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs.

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“…Darlington cell topology is an efficient way to reduce the parasitic capacitance of the composited transistors. In our previous works, Darlington f T ‐doubler has been successfully applied in various MMW ICs, such as VCO , low noise amplifier and mixer , and power amplifier designs . In this work, a modified Darlington f T ‐doubler with current‐reused technique is proposed to design a low power and low phase noise VCO.…”

Section: Introductionmentioning

confidence: 99%

A −187.7‐FoM V‐band low‐power CMOS VCO using modified f_T‐doubler with current‐reused technique

Chen

Chou

Chiou

2015

Micro & Optical Tech Letters

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A modified fT‐doubler with current‐reused technique is proposed to realize a low power and low phase noise V‐band voltage controlled oscillator (VCO) in a standard 1P9M 90‐nm CMOS. The proposed technique not only increases the operation frequency but also reduces the DC power consumption at millimeter‐wave frequencies. The short circuit unity gain frequency fT of the modified fT‐doubler yields a 31% improvement compared to that of conventional one. Measurement result shows that the designed VCO achieves a phase noise of −115.4 dBc/Hz at 10‐MHz offset under a low power consumption of 2 mW. The figure‐of‐merit is up to −187.7 dBc/Hz. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1752–1755, 2015

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A 4.2-mW 6-dB Gain 5–65-GHz Gate-Pumped Down-Conversion Mixer Using Darlington Cell for 60-GHz CMOS Receiver

Cited by 26 publications

References 20 publications

Low Noise Amplifier using Darlington Pair At 90nm Technology

Low Noise Amplifier using Darlington Pair At 90nm Technology

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

A −187.7‐FoM V‐band low‐power CMOS VCO using modified f_T‐doubler with current‐reused technique

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A 4.2-mW 6-dB Gain 5&#x2013;65-GHz Gate-Pumped Down-Conversion Mixer Using Darlington Cell for 60-GHz CMOS Receiver

Cited by 26 publications

References 20 publications

Low Noise Amplifier using Darlington Pair At 90nm Technology

Low Noise Amplifier using Darlington Pair At 90nm Technology

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

A −187.7‐FoM V‐band low‐power CMOS VCO using modified fT‐doubler with current‐reused technique

Contact Info

Product

Resources

About

A 4.2-mW 6-dB Gain 5–65-GHz Gate-Pumped Down-Conversion Mixer Using Darlington Cell for 60-GHz CMOS Receiver

A −187.7‐FoM V‐band low‐power CMOS VCO using modified f_T‐doubler with current‐reused technique