EIJI ODA, KOZO ORIHARA, TAKANORI TANAKA, TAKA0 KAMATA, A N D YASUO ISHIHARA Ahstruct-A I /2-in format 768 ( H ) X 492 ( V ) pixel interline CCD image sensor has heen developed. Unit cell dimensions are as small as 8 . 4 ( H ) X 9 . 8 ( V ) pni. In order to realize such a high-density device, novel technologies have been developed, i.e., 1) dual-channel horizontal CCI) registers, 2) single p-well vertical overflow drain, 3) high-capacitance p-well structure, and 4) inverted-LOCOS channel isolation process. A horizontal resolution of more than 500 TV lines has heen obtained. Maximuni signal charge for the vertical CCD register is as much as 1.5 X 10' electrons, corresponding to 270-nA output current, in spite of the 1.8-pm mask width narrnw-channel vertical CCI) register. The total random noise is less than 20 electrons after correlated douhle sampling. Then, the dynamic range reaches 77 dB. The photosensitivity is 0.092 pA/pN'. Experimental results also show that the technologies used here are effective for realizing a future-use high-definition CCD image sensor.