A 33W GaN HEMT Doherty amplifier with 55% drain efficiency for 2.6GHz base stations

Deguchi, Hiroaki; Ui, Norihiko; Ebihara, Koji; Inoue, Katsuro; Yoshimura, Natsue; Takahashi, Hidenori

doi:10.1109/mwsym.2009.5165936

Cited by 35 publications

(12 citation statements)

References 6 publications

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“…The performance of the PA is compared with the reported Doherty PAs using the same sized GaN HEMT power device in Table I [9], [10]. The proposed Doherty PA delivers a high efficiency with high gain and output power due to the gate bias control.…”

Section: Implementation and Experimental Resultsmentioning

confidence: 99%

Gate Bias Adaptation of Doherty Power Amplifier for High Efficiency and High Power

Park

Lee

Jee

et al. 2015

IEEE Microw. Wireless Compon. Lett.

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This letter presents an approach to maximize the output power and efficiency of a Doherty power amplifier (PA). The conventional carrier PA having match, used in a symmetric Doherty PA, does not deliver the saturated high efficiency at the 6 dB back-off power but at the 5.5 dB back-off power due to the knee voltage effect. To solve the problem, the gate biases of the carrier and peaking PAs are adapted. The gate bias voltage of the carrier PA is optimized for a higher peak output power, delivering a 3 dB larger peak power at match. That of the peaking PA is also optimized to have the same peak power of the carrier PA. A Doherty PA with the concept is designed using a 45 W gallium nitride (GaN) high electron mobility transistors (HEMT) for the carrier and peaking cells at 1.94 GHz. The measured average output power, drain/power-added efficiencies and gain are 44.35 dBm, 60.5/57.2%, and 12.75 dB for a 10 MHz long term evolution (LTE) signal with a 6.5 dB peak-to-average power ratio (PAPR). Index Terms-Drain efficiency (DE), Gallium nitride (GaN), long term evolution (LTE), power amplifier (PA).

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Section: Implementation and Experimental Resultsmentioning

confidence: 99%

Gate Bias Adaptation of Doherty Power Amplifier for High Efficiency and High Power

Park

Lee

Jee

et al. 2015

IEEE Microw. Wireless Compon. Lett.

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“…However, the intrinsic properties of GaN devices permit higher frequency operation and larger bandwidth [12] thanks to the reduced capacitive effects. Outstanding performance in terms of output power and back-off efficiency have been already demonstrated with GaN-based high-power DPAs [13]- [15], and it has to be noticed that almost all the broadband DPA prototypes presented in this review are based on GaN transistors, see Section V.…”

Section: Applications and Technologiesmentioning

confidence: 92%

The Doherty Power Amplifier: Review of Recent Solutions and Trends

Camarchia

Pirola

Quaglia

et al. 2015

IEEE Trans. Microwave Theory Techn.

205

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In this paper, an extensive review of the most up-to-date papers on microwave Doherty power amplifiers is presented. The main applications are discussed, together with the employed semiconductor technologies. The different research trends, all aimed to improve the advantages of the Doherty scheme and to solve its inherent drawbacks, are presented. The first considered topic is the maximization of efficiency and/or linearity, where analog and digital techniques are exploited. Another important trend is the bandwidth enlargement of the Doherty architecture, that involves a large number of papers. Multi-band, multi-mode solutions are also considered, using either fixed or reconfigurable solutions. The final section is dedicated to the most significant Doherty integrated implementations.Index Terms-Doherty power amplifier, gallium arsenide, gallium nitride, linearization, wireless communications.

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“…In view of the above questions, the literature [6][7][8] mentioned the offset line method to solve the problems, namely add a transmission line with 50 Ω characteristic impedance behind the carrier power amplifier and peak power amplifier, respectively called carrier offset line and peak offset line in this paper.…”

Section: Analogous Offset Line Technologymentioning

confidence: 99%

Application of New Matching Technique in Doherty Amplifier

Chen

Shen

2013

AMM

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According to the shortage of the traditional offset line in Doherty power amplifier, a new offset line technique is proposed to match carrier amplifier with the load and to improve the performance of the Doherty amplifier. By simulation of the computer software, a higher efficiency is obtained using the new offset line comparing the two kinds of offset lines. The new offset line technique could be applied in the system with high linearity and low power operation.

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A 33W GaN HEMT Doherty amplifier with 55% drain efficiency for 2.6GHz base stations

Cited by 35 publications

References 6 publications

Gate Bias Adaptation of Doherty Power Amplifier for High Efficiency and High Power

Gate Bias Adaptation of Doherty Power Amplifier for High Efficiency and High Power

The Doherty Power Amplifier: Review of Recent Solutions and Trends

Application of New Matching Technique in Doherty Amplifier

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