A 32KB 18ns random access time embedded PCM with enhanced program throughput for automotive and smart power applications

Pasotti, M.; Carissimi, Marcella; Auricchio, C.; Brambilla, D.; Calvetti, E.; Capecchi, L.; Croce, L.; Gallinari, D.; Mazzaglia, C.; Rana, Vikas; Zurla, Riccardo; Cabrini, A.; Torelli, G.

doi:10.1109/esscirc.2017.8094590

Cited by 6 publications

(2 citation statements)

References 6 publications

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“…been exploited to build prototypes that could ultimately lead to the development of dense and power efficient on-chip memories [1]- [3]. That said, WRITES to memory cells based on resistive devices could be slow and demand significant energy, as long set/reset pulses with currents in the range of tens or even hundreds of micro Amperes are required.…”

mentioning

confidence: 99%

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array

Reis

Datta

Niemier

et al. 2019

IEEE J. Explor. Solid-State Comput. Devices Circuits

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High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spintransfer torque magnetic random access memory (STT-RAM), resistive random access memory (RRAM), and ferroelectric field effect transistor-based random access memory (FeFET-RAM) are alternatives for replacing hardware kernels such as SRAM-based last level caches (LLC) due to their fast access times and lower leakage. In this paper, we study an ultra-dense FeFET-RAM based on 1-FeFET memory cells, and address potential disturbance issues at the array level. Disturbances are studied experimentally and via simulation. Experimental measurements are well correlated with modeling results suggesting that we have a good understanding of how disturbance issues will manifest themselves. That said, previous WRITE schemes for 1-FeFET arrays may: 1) exacerbate disturbances and 2) significantly degrade figures of merit (FoM) such as WRITE power. To address these issues, we propose the use of columnwise body connections to simultaneously overcome disturbances and reduce leakage currents during WRITES. We present detailed studies on how 1-FeFET memory cells and arrays (with columnwise body bias) fare when compared to traditional SRAM approaches and other emerging technologies. Notably, we benchmark the 1-FeFET memory against 1T + 1FeFET and 2T + 1FeFET designs proposed in early works, as well as SRAM, STT-RAM, and RRAM. Our evaluation of a 64×64 FeFET-RAM array shows that the area, READ delay, and static power are reduced by ∼5.3×, ∼1.5×, and ∼74×, respectively, when compared to an SRAM equivalent. Also, the 1-FeFET memory cell design shows ∼50× improvements in terms of WRITE energy with respect to STT-RAM and RRAM counterparts. INDEX TERMS Emerging technologies, FeFETs, memory. I. INTRODUCTION In state-of-the-art processors, cache structures are typically comprised of complementary metal-oxide-semiconductor (CMOS) static random access memory (SRAM) cells. While transistor scaling has helped to reduce memory cost and improve cache capacity, low density and high leakage power associated with MOSFET SRAMs make it challenging to satisfy the growing memory demands from data intensive programs via 2-D CMOS-based SRAMs. The aforementioned challenges with SRAM have led to the search for alternative on-chip memory structures. Nonvolatile memories based on emerging technologies such as spin-transfer torque magnetic random access memory (STT-RAM), resistive random access memory (RRAM), and phase-change memory (PCM) have

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mentioning

confidence: 99%

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array

Reis

Datta

Niemier

et al. 2019

IEEE J. Explor. Solid-State Comput. Devices Circuits

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“…Phase‐change random access memory (PCRAM) is an attractive nonvolatile memory technology 1,2 based on the fast and reversible transition between the high electrical resistivity amorphous phase and the low resistivity crystalline phase of thin chalcogenide materials. PCRAM are already produced in advanced fabs (e.g., in resistive memory crossbar products such as Intel 3D XPoint), and extensive research is being conducted to optimize their properties, for instance for automotive applications.…”

Section: Introductionmentioning

confidence: 99%

Accelerating the development of phase‐change random access memory with in‐fab plasma profiling time‐of‐flight mass spectrometry

Nolot

Mazel

Barnes

et al. 2020

Surface & Interface Analysis

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We demonstrate the potential of using plasma profiling time-of-flight mass spectrometry (PP-TOFMS) to accelerate process developments for phase-change random access memory (PCRAM) applications, which require advanced materials with composition-driven properties. We assess the performances of PP-TOFMS for the chemical depth-profiling of GeSbTe phase change materials, first after deposition steps to investigate the top surface layer and the incorporation of silicon into the amorphous matrix, then after the thermal annealing step to refine in situ capping strategies, and finally in close loop with etching process steps. Comparison of reference-free semiquantitative PP-TOFMS analysis based on ion beam ratio with Rutherford backscattering spectrometry shows remarkable agreement (10% relative). PP-TOFMS proves to be a fast screening tool, which allows process monitoring and selection of samples that indeed need more complex analysis. K E Y W O R D S chemical depth profile, metrology, phase change memory, plasma profiling time-of-flight mass spectrometry

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An Extended Temperature Range ePCM Memory in 90-nm BCD for Smart Power Applications

Carissimi

Auricchio

Calvetti

et al. 2022

ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)

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A 32KB 18ns random access time embedded PCM with enhanced program throughput for automotive and smart power applications

Cited by 6 publications

References 6 publications

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array

Accelerating the development of phase‐change random access memory with in‐fab plasma profiling time‐of‐flight mass spectrometry

An Extended Temperature Range ePCM Memory in 90-nm BCD for Smart Power Applications

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