A 324-GHz Source/Modulator With &lt;formula formulatype="inline"&gt;&lt;tex Notation="TeX"&gt;$-$&lt;/tex&gt;&lt;/formula&gt;6.5 dBm Output Power

Li, Yihu; Goh, Wang Ling; Liu, Chao; Cui, Bohua; Liu, Haitao; Xiong, Yong Zhong

doi:10.1109/tthz.2015.2411053

Cited by 5 publications

(1 citation statement)

References 23 publications

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“…THz sources based on silicon/SiGe CMOS around 300 GHz have also been reported, which generally show great advantages of high integration. However, the maximum output power of only −4.6 dBm and −6.5 dBm and optimum efficiency of only 1.4% and 0.052% are presented, respectively [18,19]. THz sources based on Schottky diodes possess many advantages, including compactness, broadband, frequency stability, temperature stability, and capability of room temperature operation [20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array

et al. 2020

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Frequency multipliers and mixers based on Schottky barrier diodes (SBDs) are widely used in terahertz (THz) imaging applications. However, they still face obstacles, such as poor performance consistency caused by discrete flip-chip diodes, as well as low efficiency and large receiving noise temperature. It is very hard to meet the requirement of multiple channels in THz imaging array. In order to solve this problem, 12-μm-thick gallium arsenide (GaAs) monolithic integrated technology was adopted. In the process, the diode chip shared the same GaAs substrate with the transmission line, and the diode’s pads were seamlessly connected to the transmission line without using silver glue. A three-dimensional (3D) electromagnetic (EM) model of the diode chip was established in Ansys High Frequency Structure Simulator (HFSS) to accurately characterize the parasitic parameters. Based on the model, by quantitatively analyzing the influence of the surface channel width and the diode anode junction area on the best efficiency, the final parameters and dimensions of the diode were further optimized and determined. Finally, three 0.34 THz triplers and subharmonic mixers (SHMs) were manufactured, assembled, and measured for demonstration, all of which comprised a waveguide housing, a GaAs circuit integrated with diodes, and other external connectors. Experimental results show that all the triplers and SHMs had great performance consistency. Typically, when the input power was 100 mW, the output power of the THz tripler was greater than 1 mW in the frequency range of 324 GHz to 352 GHz, and a peak efficiency of 6.8% was achieved at 338 GHz. The THz SHM exhibited quite a low double sideband (DSB) noise temperature of 900~1500 K and a DSB conversion loss of 6.9~9 dB over the frequency range of 325~352 GHz. It is indicated that the GaAs monolithic integrated process, diodes modeling, and circuits simulation method in this paper provide an effective way to design THz frequency multiplier and mixer circuits.

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Section: Introductionmentioning

confidence: 99%

Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array

et al. 2020

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A 320-GHz 1<formula formulatype="inline"><tex Notation="TeX">$\times$</tex></formula>4 Fully Integrated Phased Array Transmitter Using 0.13-<formula formulatype="inline"><tex Notation="TeX">$\mu$</tex></formula>m SiGe BiCMOS Technology

Deng

Li²,

Li³

et al. 2015

IEEE Trans. THz Sci. Technol.

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This paper presents a 320-GHz 1 4 fully integrated phased array transmitter using 0.13-m SiGe BiCMOS technology. The 1 4 array transmitter is aiming for terahertz wireless communication and is based on RF beam forming architecture. By integrating a 20-GHz phase-locked-loop (PLL) frequency synthesizer, an 80-GHz quadrupler, a 1:4 Wilkinson power divider network, four-way 80-GHz tunable attenuators, amplifiers, analog phase shifters, 320-GHz frequency quadruplers/modulators, and on-chip antenna arrays, the transmitter chip achieves a maximal EIRP of 10.6 dBm at 320 GHz with the 3-dB bandwidth of 20 GHz, and beam scanning range is obtained. The dc consumption of the whole chip is 1000 mW and the total chip size is 8 4.3 mm .

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A 340-GHz Heterodyne Receiver Front End in 40-nm CMOS for THz Biomedical Imaging Applications

Kuo

et al. 2016

IEEE Trans. THz Sci. Technol.

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A 324-GHz Source/Modulator With <formula formulatype="inline"><tex Notation="TeX">$-$</tex></formula>6.5 dBm Output Power

Cited by 5 publications

References 23 publications

Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array

Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array

A 320-GHz 1<formula formulatype="inline"><tex Notation="TeX">$\times$</tex></formula>4 Fully Integrated Phased Array Transmitter Using 0.13-<formula formulatype="inline"><tex Notation="TeX">$\mu$</tex></formula>m SiGe BiCMOS Technology

A 340-GHz Heterodyne Receiver Front End in 40-nm CMOS for THz Biomedical Imaging Applications

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