2005
DOI: 10.1109/jssc.2004.837986
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A 312-MHz 16-Mb random-cycle embedded DRAM macro with a power-down data retention mode for mobile applications

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Cited by 10 publications
(1 citation statement)
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“…We assume that power-gating of eDRAM is achieved by a suitable circuit-level technique, as proposed by several authors [10,12,16,32]. For each module, we use A − Amin control bits which control turning-off or turning-on of the ways in that module.…”
Section: Implementation and Overhead Assessmentmentioning
confidence: 99%
“…We assume that power-gating of eDRAM is achieved by a suitable circuit-level technique, as proposed by several authors [10,12,16,32]. For each module, we use A − Amin control bits which control turning-off or turning-on of the ways in that module.…”
Section: Implementation and Overhead Assessmentmentioning
confidence: 99%