A 300-mm Silicon Photonics Platform for Large-Scale Device Integration

Horikawa, Tsuyoshi; Shimura, Daisuke; Okayama, Hideaki; Jeong, Seok–Hwan; Takahashi, Hiroyuki; Ushida, Jun; Sobu, Yohei; Shiina, Akemi; Tokushima, Masatoshi; Kinoshita, Keizo; Mogami, Tohru

doi:10.1109/jstqe.2018.2819893

Cited by 83 publications

(49 citation statements)

References 91 publications

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“…Over the years, a variety of platforms have emerged with different thickness of the guiding silicon layer [24]- [28], [30], [31], [39]- [44], all with thicknesses of a few hundred nanometer. Even with this variation, SOI with a 220 nm core thickness has become a kind of de-facto standard and it is being used by a majority of the fabs.…”

Section: A Silicon-on-insulator (Soi)mentioning

confidence: 99%

“…Due to the high index contrast of the material system, dimensional control is important [31], [54], [57]. For example, the process control in terms of waveguide width and height required for wavelength selective devices in sub-micron SOI devices is more stringent than for CMOS electronics.…”

Section: E Need For Standardization In Silicon Photonicsmentioning

confidence: 99%

“…Standardization in the process flow provides stability and repeatability in the device performance for large manufacturing volumes. Moreover, it helps in gauging variance in key device performance parameters [24], [31]. A well-understood and stable device performance is crucial to develop complex photonic integrated systems on a chip.…”

Section: E Need For Standardization In Silicon Photonicsmentioning

confidence: 99%

“…Table I provides a non-exhaustive list of institutes and foundries providing (or in the process of providing) open-access silicon photonics technologies. In the early days, the fabs chose 220 nm SOI as the substrate for their platform development [24], [25], [27], [31], [41]. More recently silicon photonics open-access platforms based on 310 nm SOI [26], [40], 500 nm SOI [155], SiN and Germanium-based mid-infrared platforms have also emerged.…”

Section: Open-access Modalitiesmentioning

confidence: 99%

“…These improvements resulted in demonstrating passive devices with lower loss, superior spectral accuracy and higher reproducibility. Performance of active devices has also benefited from the evolved processing technology whereby different types of efficient modulators and photo-detectors operating at high-speed are demonstrated [24]- [28], [31], [32], [156]- [161]. As a result of advances in the process technology, open-access fabs have consolidated their platforms by offering new process modules such as very low loss waveguides [156], [157], high-speed modulators [162]- [167], integration of efficient electro-optic materials in a silicon photonics process flow [174], [175], multi-layer SiN on Si [108], [135]- [139], and broadband fiber-chip-fiber couplers [168]- [173], [176].…”

Section: Open-access Modalitiesmentioning

confidence: 99%

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Open-Access Silicon Photonics: Current Status and Emerging Initiatives

et al. 2018

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Silicon Photonics is widely acknowledged as a gamechanging technology, driven by the needs of datacom and telecom. Silicon Photonics builds on highly capital-intensive manufacturing infrastructure, and mature open-access silicon photonics platforms are translating the technology from research fabs to industrial manufacturing levels. To meet the current market demands for silicon photonics manufacturing, a variety of openaccess platforms is offered by CMOS pilot lines, R&D institutes and commercial foundries. This paper presents an overview of existing and upcoming commercial and non-commercial openaccess silicon photonics technology platforms. We also discuss the diversity in these open-access platforms and their key differentiators.

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Section: A Silicon-on-insulator (Soi)mentioning

confidence: 99%

Section: E Need For Standardization In Silicon Photonicsmentioning

confidence: 99%

Section: E Need For Standardization In Silicon Photonicsmentioning

confidence: 99%

Section: Open-access Modalitiesmentioning

confidence: 99%

Section: Open-access Modalitiesmentioning

confidence: 99%

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Open-Access Silicon Photonics: Current Status and Emerging Initiatives

et al. 2018

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Topological Silicon Photonics

Tan

2021

Advanced Photonics Research

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The field of topological photonics has seen tremendous and wide‐ranging developments in recent years. Evolving from the broader field of topological insulators, topological photonics systems today harness a variety topological phases. These include the Su–Schreifer–Heeger, quantum Hall, quantum valley Hall and quantum spin Hall topologies. Importantly, the latter two generate edge states with opposite group velocities and opposite spin, respectively, allowing unidirectional light propagation and advanced photonic routing to occur. Amongst these exciting developments is a subset of advancements made in topological silicon photonics, which could potentially lend its appeal to complementary metal–oxide–semiconductor (CMOS) photonics applications, including telecommunications, data communications, quantum photonics, future exascale supercomputers, photonic neuromorphic computing, and infrared sensing. The fundamental underpinnings of these topological phases lead to interesting features, including chirality, scatter‐free light propagation around sharp bends, and importantly topological protection against defects, disorder, and scattering. This topological protection may be harnessed toward tunable light propagation, photon‐pair generation, quantum spatial entanglement, robust photonic routing, and beyond. Herein, the recent advancements made in the burgeoning field of topological silicon photonics are discussed.

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Inverse Design of Ultra‐Compact Multimode Waveguide Bends Based on the Free‐Form Curves

Sun

Dong

Zhang

et al. 2021

Laser & Photonics Reviews

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On-chip mode-division multiplexing (MDM) can increase the transmission capacity of a single optical bus waveguide. It is of great significance for the MDM systems to design the multimode waveguide bends (MWBs) with compact sizes. A method of designing the MWB using the inverse design algorithm is presented in this paper. Ultra-compact MWBs with high performances are realized by changing the curvature radius of the waveguide curve, and the fabrication process only requires a single step photo-lithography and plasma etching. The three-mode bent waveguide with an effective radius of only 9.35 µm is designed and tested. The theoretical excess losses of TE 0 , TE 1 , and TE 2 mode are less than 0.04 dB in a wide spectral range of 1500 to 1600 nm, and the crosstalks between all guided modes are all less than −29 dB. For the fabricated 90°waveguide bend the measured excess losses are 0.17, 0.04, and 0.16 dB at the central wavelength of 1550 nm, respectively, and the crosstalks between all three modes are less than −21 dB in the wavelength range from 1520 to 1600 nm. The proposed design method can be also extended to more mode-channels.

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A 300-mm Silicon Photonics Platform for Large-Scale Device Integration

Cited by 83 publications

References 91 publications

Open-Access Silicon Photonics: Current Status and Emerging Initiatives

Open-Access Silicon Photonics: Current Status and Emerging Initiatives

Topological Silicon Photonics

Inverse Design of Ultra‐Compact Multimode Waveguide Bends Based on the Free‐Form Curves

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