A 3-dimensional model for low-pressure chemical-vapor-deposition step coverage in trenches and circular vias

Abstract

A general analytical model has been developed to calculate particle transport and spatial step coverage evolution within 2-dimensional and 3-dimensional microelectronic device structures during low-pressure chemical vapor deposition. The model can account for spatially dependent nonunity reactive ‘‘sticking probabilities,’’ anisotropic source fluxes, and trench ‘‘shadowing’’ effects. There is no restriction on the initial and evolving shape of the structure. Model results are compared to direct Monte Carlo simulations for step coverage on rectangular trenches, and are found to more accurately describe the observed experimental step coverages during phosphorous-doped silicon dioxide glass film deposition. We present here, for the first time, detailed calculations of step coverage in circular vias for a wide range of reactive sticking probabilities.

Conformity of Silica-like Thin Films Deposited by Atmospheric Pressure Townsend Discharge and Transport Mechanisms

“…This process can induce a local averaging of the solid angles, improving the conformity. Nevertheless, several studies [31]- [35] previously demonstrated that the influence of the surface diffusion on the conformity is very low in most cases.…”

Arbitrary-pressure chemical vapor deposition modeling using direct simulation Monte Carlo with nonlinear surface chemistry

“…Most notable is the assumption of an equilibrium gas distribution that results in Eqs. (5) and (6) that we use above. In spite of this, the method is able to give correct results in many different cases and in particular it has been verified at high Knudsen numbers [1,17] where gas particle velocity distributions may deviate significantly from the equilibrium distribution.…”

3D Simulation of Topography and Doping Processes at FhG

“…For a finite triangle size, the matrix elements Tij are given as an integral, which cannot be solved analytically. Therefore, in cases where equation (3) and the procedure for the calculation of . 6.Qij lead to a significant error, the corresponding triangles i and j are each subdivided into smaller triangles.…”