A 3.4μm Pixel Pitch Global Shutter CMOS Image Sensor Over 110dB Dynamic Range in One-Frame Exposure with Dual In-Pixel Charge Domain Memory

A 3.4 μm pixel pitch global shutter CMOS image sensor with dual in-pixel charge domain memory

“…Figure 16 shows a performance comparison of recently published GS CISs 1,2,6,8,9,12,[14][15][16] and single exposure HDR RS CIS. 31,32) Based on recent results, several characteristics are comparable or better than those of others, in spite of the pixel size shrinkage, the front-side illuminated structure and the addition of the CDMEM and transfer gates.…”

“…In order to solve the constraints mentioned above and realize high pixel performance and high quality images with GS CIS, our motivation is to develop dual CDMEMs type GS CIS. 1,6) 3. Sensor architecture The two CDMEMs are overall covered with LS structure to avoid holding signal charge changing due to the influence of parasitic light.…”

“…To realize the said high-performance GS CIS, while several methods have been proposed, we adopted and reported a dual in-pixel charge domain memories (CDMEMs) type GS CIS 1) and an in-pixel CDMEM type GS CIS [2][3][4][5] in previous research. The CDMEM type GS CISs are widely used, and various proposals have been reported.…”

“…The CDMEM type GS CISs are widely used, and various proposals have been reported. [1][2][3][4][5][6][7][8][9][10][11][12][13] Figure 3 summarizes the comparison with other type GS CISs. The CDMEM type GS is advantageous in low kTC noise compared to a floating diffusion (FD) based type GS, 14) since the correlated double sampling operation can be performed.…”