A 2D analytical model of the channel potential and threshold voltage of Double-Gate (DG) MOSFETs with vertical Gaussian doping profile

Abstract

The paper presents a 2D analytical model for the potential function and threshold voltage of symmetric Double-Gate (DG) MOSFETs with vertical Gaussian doping profile in the channel.

Analysis on DIBL of DGMOSFET for Device Parameters

“…Using various gate voltages and drain voltages, these results have been compared with those of 2D simulator indicated with stars and squares. Note these results are good agreements with those of 2D simulator [6]. Minimun potential value has directed to source with the increase of gate voltage, and surface potential is increasing with the increase of drain voltage.…”

“…In order to solve this problem, various researches have been done such as doping profile control, gate workfunction engineering, and multiple gate device [4]. A fully analytical model for potential distribution of DGMOSFET is derived in details from Poisson's equation to investigate SCEs with various structure and process parameters [5] [6]. But they don't investigate DIBL in details even though their potential model is validated with results of 2D simulation.…”

“…This study has investigated the DIBL when channel doping profile is Gaussian distribution. Since the Gaussian distribution is general doping profile, this study uses this distribution to solve Poisson's equation, and explains Tiwari's potential model [6]. Using this model, we obtain the DIBL and explain the dependence of DIBL according to the channel thickness, gate oxide thickness and channel length for various channel doping profiles.…”

The Analysis of Breakdown Voltage for the Double-gate MOSFET Using the Gaussian Doping Distribution

“…Tiwari et al [6] have obtained a potential analytical model from Poisson's equation using the Gaussian function for the doping distribution, and this model has been verified in previous research [7]. In this study, the breakdown voltage model has been derived from Tiwari's analytical potential model [6] and Fulop's breakdown condition [8] to investigate the dependence of breakdown voltage on device parameters such as doping concentration and channel length. The shape of the Gaussian function is changed for a projected range and standard projected deviation of doping distribution obtained from the ion implantation process.…”

Analysis of Conduction Path Dependent Off-Current of Double Gate MOSFET

“…The double gate MOSFET (DGMOSFET) is the simplest and representative MugFET [1,2]. Tiwari et al have used the Gaussian function as doping profile to solve the Poisson equation and presented successfully the analytical potential and threshold voltage model, compared with experimental results [3]. Since the DGMOSFET has two gates of forward and backward contact, the two conduction path may be formed in the channel.…”