A 29-dBm OIP3 Dual-Stage Power Amplifier with Analog Pre-Distorter in 0.18 µm CMOS for IoT Transceiver

Mariappan, Selvakumar; Rajendran, Jagadheswaran; Noh, Norlaili Mohd; Ramiah, Harikrishnan

doi:10.1080/03772063.2019.1700178

Cited by 2 publications

(1 citation statement)

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“…To address this limitation, there was a recent focus on researching CMOS-based RF integrated circuits (RFICs) for wireless mobile applications [ 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 ]. However, CMOS-based PAs have several disadvantages due to their lower breakdown voltage, their higher substrate loss, and the unavailability of back via holes for the ground connection, which limit the achievable output power and efficiency compared to their III-V counterparts [ 11 , 12 , 13 ]. Despite their disadvantages, CMOS-based PAs offer a promising alternative due to their cost-effectiveness and potential for integration with other circuits.…”

Section: Introductionmentioning

confidence: 99%

A State-of-the-Art Review on CMOS Radio Frequency Power Amplifiers for Wireless Communication Systems

et al. 2023

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Wireless communication systems have undergone significant development in recent years, particularly with the transition from fourth generation (4G) to fifth generation (5G). As the number of wireless devices and mobile data usage increase, there is a growing need for enhancements and upgrades to the current wireless communication systems. CMOS transceivers are increasingly being explored to meet the requirements of the latest wireless communication protocols and applications while achieving the goal of system-on-chip (SoC). The radio frequency power amplifier (RFPA) in a CMOS transmitter plays a crucial role in amplifying RF signals and transmitting them from the antenna. This state-of-the-art review paper presents a concise discussion of the performance metrics that are important for designing a CMOS PA, followed by an overview of the trending research on CMOS PA techniques that focuses on efficiency, linearity, and bandwidth enhancement.

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