A 28 GHz Power Amplifier Combing Linearizer, Adaptive Bias and G<sub>m</sub> Compensation to Improve Back-off and P<sub>1dB</sub> Efficiency

Chang, Yu-Teng; Hung, Li-Cheng; Lu, Hsin-Chia

doi:10.23919/eumc48046.2021.9338061

Cited by 3 publications

(1 citation statement)

References 12 publications

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“…In 2021, work [47] proposed a 3-stage CS PA in 90 nm CMOS, achieving high gain and good back-off PAE at 28 GHz. Y.T.…”

Section: Common Sourcementioning

confidence: 99%

Review of Ka-Band Power Amplifier

Wang

et al. 2022

Electronics

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With the increase in the demand for high-speed transmission communication, satellite communication is developing rapidly. Because of the bandwidth capacity, the K/Ka band is considered the mainstream frequency band of satellite communication. The performance of a power amplifier (PA) directly affects the power of the transmitter, so the application of a power amplifier in Ka-band satellite communication is very important. A review of the state-of-the-art PA in the Ka band is presented in this article. The structure of the PA introduced includes common source, cascode, stacked field-effect transistor (FET), power combining, and Doherty PA, highlighting the advantages and disadvantages. The main solid-state technologies are outlined, including Si, SiGe, GaAs, and GaN, emphasizing Si complementary metal–oxide–semiconductor (CMOS) due to low price and high integration.

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“…In 2021, work [47] proposed a 3-stage CS PA in 90 nm CMOS, achieving high gain and good back-off PAE at 28 GHz. Y.T.…”

Section: Common Sourcementioning

confidence: 99%

Review of Ka-Band Power Amplifier

Wang

et al. 2022

Electronics

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A high-linearity 24-32-GHz amplifier with AM-AM/PM compensation technology for 5G applications

Sun

et al. 2022

IEICE Electron. Express

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This paper presents a compact 24-32 GHz high-linearity broadband, fully integrated amplifier which is designed in 130-nm SiGe (BiCMOS). The principle of improving the linearity of degeneration inductor and the effect of the driving stage on linearity are analyzed. To achieve flat broadband, the transformer is also used in the interstage matching. Output matching for low insertion loss networks has been selected carefully. The amplifier demonstrates a small signal gain of 11.3 dB range from 24GHz to 32GHz with a gain flatness of ±0.5dB. Measurements show a maximum power added efficiency (PAE) of 18.54% with output 1dB compression power for 7.6 dBm at 32GHz.

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Ka-Band Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor and Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS

SUGIURA

Yoshimasu

2023

IEICE Trans. Electron.

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A 28 GHz Power Amplifier Combing Linearizer, Adaptive Bias and G_m Compensation to Improve Back-off and P_1dB Efficiency

Cited by 3 publications

References 12 publications

Review of Ka-Band Power Amplifier

Review of Ka-Band Power Amplifier

A high-linearity 24-32-GHz amplifier with AM-AM/PM compensation technology for 5G applications

Ka-Band Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor and Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS

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A 28 GHz Power Amplifier Combing Linearizer, Adaptive Bias and Gm Compensation to Improve Back-off and P1dB Efficiency

Cited by 3 publications

References 12 publications

Review of Ka-Band Power Amplifier

Review of Ka-Band Power Amplifier

A high-linearity 24-32-GHz amplifier with AM-AM/PM compensation technology for 5G applications

Ka-Band Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor and Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS

Contact Info

Product

Resources

About

A 28 GHz Power Amplifier Combing Linearizer, Adaptive Bias and G_m Compensation to Improve Back-off and P_1dB Efficiency