A 28 GHz Low Phase-Noise Colpitts VCO with Wide Tuning-Range in SiGe Technology

Peng, Zhigang; Hou, Debin; Chen, Jixin; Yu, Xiang; Wang, Hong

doi:10.1109/rfit.2018.8524053

Cited by 10 publications

(10 citation statements)

References 8 publications

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“…The FOM and FOM T of the proposed VCO are around −177.92 and −178.2, respectively. Table 1 shows the performance comparison of the proposed VCO and the published state-of-the-art VCOs [9][10][11][12][13][14][15][16][17][18][19]. Due to high-power consumption, the calculated FOM of this design could not stand out when comparing with those published state-of-the-art designs.…”

Section: Measurement Resultsmentioning

confidence: 99%

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New 20 GHz push–push common‐collector Colpitts VCO

Huang

Dai

et al. 2020

IET Microwaves, Antennas & Propagation

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A wide‐band push–push common‐collector Colpitts voltage‐controlled oscillator (VCO) usingimpedance peaking network and gain enhancing technique is proposed in this work.The impedance peaking network is introduced to increase the coupling factor ofthe differential inductor in the inductorcapacitor (LC) tank without sacrificing the quality factor. The impedancepeaking technique could guarantee the push–push VCO unconditionally oscillatingin a differential mode without degrading the phase noise performance. The gainenhancing technique employs an LC resonator in series with the emitterdegeneration resistor in the common‐collector amplifier in the VCO core toimprove the VCO oscillating amplitude and then improve the phase noiseperformance. The proposed VCO oscillates at around 20 GHz with >10.5%frequency tuning range from 18.9 to 21.4 GHz across temperature from −40 to125°C. The measured phase noise is lower than −107 dBc/Hz at 1 MHz offset acrossthe entire working temperature (−40 125°C). The whole VCO dissipates 45 mA under3.3 V power supply, and the typical figure of merit is around −177.92.

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Section: Measurement Resultsmentioning

confidence: 99%

“…to the figure of merit (FOM) and the figure of merit including FTR (FOM T ) defined as[9][10][11][12][13][14][15][16] …”

mentioning

confidence: 99%

New 20 GHz push–push common‐collector Colpitts VCO

Huang

Dai

et al. 2020

IET Microwaves, Antennas & Propagation

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“…Circuit schematic of the differential topology Colpitts VCO is depicted in Fig. 2, which is based on our previous work reported in [17]. Differential topology is adopted due to the advantage of virtual RF ground node for better phase noise and higher output power meanwhile.…”

Section: Appendix Bmentioning

confidence: 99%

“…The measured result corresponds to -90.4 dBc/Hz at 156 GHz frequency range (According to the relationship between phase noise and frequency multiple, a factor of 27.6 dB (20 log (24)) was added). The phase noise that contributed by divider chain and subsequent tripler and doubler is neglected [2,17]. The measured phase noise of the entire signal source versus the tuning voltage V tune of VCO are shown in Fig.…”

Section: Appendix Ementioning

confidence: 99%

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A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process

Zhou

Yan

Peng

et al. 2020

Sci. China Inf. Sci.

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A 143.2-168.8 GHz signal source with 5.6 dBm peak output power at 159 GHz and corresponding-94 dBc/Hz @ 1 MHz phase noise is reported. The circuit includes a 26 GHz Colpitts topology voltagecontrolled-oscillator and a static divide-by-four chains, an E-Band frequency tripler, a balanced D-Band frequency doubler. Through systematically analyzing the influence of input power level (detected by power detector) and base bias voltage on the output power of active frequency doubler, implementation of the D-Band doubler has been carefully designed to maximize output power of the signal source. Besides, by adopting high pass matching network in frequency tripler and frequency doubler design, the signal source exhibits an excellent unwanted harmonics suppression of over 30 dBc in the whole output tuning range. The total chip area is 2.4 mm 2 and the whole DC power consumption is 379 mW, which resulting in a peak DC-to-RF efficiency of 1.14 %. Compared with other D-Band signal sources, this signal source achieves the best phase noise (with divider chain), very competitive tuning bandwidth and the highest output power while using silicon-based processes with the lowest cutoff f T frequency.

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A Comparative Study of Ring VCO and LC-VCO: Design, Performance Analysis, and Future Trends

Sivaraaj,

Majeed

2023

IEEE Access

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Voltage-controlled Oscillator (VCO) is a prominent part that has been used to generate a stable frequency for the high-frequency transceiver system. This survey encompasses a comparative analysis of two commonly used VCO architectures: the Ring VCO and LC-VCO. The Ring VCO has been constructed with the collection of ring delay cells. Moreover, the LC-VCO utilizes inductors, capacitors, fine-tuning circuits, coarse-tuning circuits to generate frequency. Furthermore, this study investigates an in-depth exploration of VCO structures, operational principles, advantages, limitations, and performance metrics. In addition, it evaluates performance parameters, including operating frequency range, phase noise, figure of merit, and tuning techniques. This research suggests that based on the application and its requirements, the VCO performance parameters need to be varied. This survey employs diverse types of VCO, and its design methods. Implications for future research and study of VCO design and integration are discussed.

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A 28 GHz Low Phase-Noise Colpitts VCO with Wide Tuning-Range in SiGe Technology

Cited by 10 publications

References 8 publications

New 20 GHz push–push common‐collector Colpitts VCO

New 20 GHz push–push common‐collector Colpitts VCO

A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process

A Comparative Study of Ring VCO and LC-VCO: Design, Performance Analysis, and Future Trends

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