2019 IEEE Radio and Wireless Symposium (RWS) 2019
DOI: 10.1109/rws.2019.8714268
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A 28-GHz-band Stacked FET Linear Power Amplifier IC with 36.2 % PAE at 3-dB back-off from P1dB in 56-nm SOI CMOS

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Cited by 4 publications
(1 citation statement)
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“…With the demand of social life for communication, the power of radio frequency signal is also increasing. To ensure the amplification linearity of the linear power amplifier, the working range of the linear power amplifier must return to the power back-off area [17] [18]. In the application design of modern digital transmitter, switching power amplifier has gradually become a better choice because of the problem of power back-off.…”
Section: Introductionmentioning
confidence: 99%
“…With the demand of social life for communication, the power of radio frequency signal is also increasing. To ensure the amplification linearity of the linear power amplifier, the working range of the linear power amplifier must return to the power back-off area [17] [18]. In the application design of modern digital transmitter, switching power amplifier has gradually become a better choice because of the problem of power back-off.…”
Section: Introductionmentioning
confidence: 99%