1991 Symposium on VLSI Technology 1991

DOI: 10.1109/vlsit.1991.705993

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A 26ps Selective Epitaxial Bipolar Technology

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Cited by 4 publications

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“…The collectorcollector breakdown voltage exceeded 200 V, indicating complete isolation. The base pinched resistance was 1.8 kWsq, which is lower than that of a previously reported 30 GHz bipolar transistors[8,9]. Thus, the EBT achieves a high cutoff frequency with a low base resistance.Table 1.…”

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confidence: 70%

High-speed epitaxial base transistors on bonded SOI

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Proceedings of the 1991 Bipolar Circuits and Technology Meeting

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We propose fully isolated high-speed bipolar transistors using a photoepitaxial base and waferbonded SO1 . We formed 0.7-pm-thick buried layer that was highly doped by ion implantation before bonding. We fabricated epitaxial base transistors (EBTs) on the 1-pm-thick bonded Sol. The devices had a cutoff frequency of 32 GHz.

“…The collectorcollector breakdown voltage exceeded 200 V, indicating complete isolation. The base pinched resistance was 1.8 kWsq, which is lower than that of a previously reported 30 GHz bipolar transistors[8,9]. Thus, the EBT achieves a high cutoff frequency with a low base resistance.Table 1.…”

mentioning

confidence: 70%

High-speed epitaxial base transistors on bonded SOI

¹

,

²

,

³

et al.

Proceedings of the 1991 Bipolar Circuits and Technology Meeting

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We propose fully isolated high-speed bipolar transistors using a photoepitaxial base and waferbonded SO1 . We formed 0.7-pm-thick buried layer that was highly doped by ion implantation before bonding. We fabricated epitaxial base transistors (EBTs) on the 1-pm-thick bonded Sol. The devices had a cutoff frequency of 32 GHz.

Physical modeling of the transit time in bipolar transistors

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1991

Microelectronic Engineering

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Near-future perspectives for Si and Si1−yGey bipolar transistors

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1992

Microelectronic Engineering

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No abstract

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