A 26.5-40 GHz Stacked Power Amplifier in 130 nm SiGe BiCMOS Technology

Zhang, Chi; Li, Zhiqun; Cheng, Guoxiao; Wang, Huan; Li, Zhennan

doi:10.1109/cicta.2018.8706045

Cited by 1 publication

(1 citation statement)

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“…In the literature, stacked PAs are largely exploited in CMOS technology [11][12][13][14][15][16][17][18], where the breakdown voltage is a major limit, but some examples can also be found in GaAs [19][20][21][22][23][24][25][26][27] and very few in GaN [28][29][30][31]. A main advantage of the stacked PA is that it can be profitably adopted as a basic high-power and high-gain cell to be further exploited in more complex PA architectures, from classical parallel combined PAs [32] to advanced architectures such as distributed PAs [33], spatially-combined PAs [34] and Doherty PAs [30,35].…”

Section: Introductionmentioning

confidence: 99%

Space-Compliant Design of a Millimeter-Wave GaN-on-Si Stacked Power Amplifier Cell through Electro-Magnetic and Thermal Simulations

et al. 2021

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The stacked power amplifier is a widely adopted solution in CMOS technology to overcome breakdown limits. Its application to compound semiconductor technology is instead rather limited especially at very high frequency, where device parasitic reactances make the design extremely challenging, and in gallium nitride technology, which already offers high breakdown voltages. Indeed, the stacked topology can also be advantageous in such scenarios as it can enhance gain and chip compactness. Moreover, the higher supply voltages and lower supply currents beneficially impact on reliability, thus making the stacked configuration an attractive solution for space applications. This paper details the design of two stacked cells, differing in their inter-stage matching strategy, conceived for space applications at Ka-band in 100 nm GaN-on-Si technology. In particular, the design challenges related to the thermal constraints posed by space reliability and to the electro-magnetic cross-talk issues that may arise at millimeter-wave frequencies are discussed. The best cell achieves at saturation, in simulation, 3 W of output power at 36 GHz with associated gain and efficiency in excess of 7 dB and 35%, respectively.

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