A 26–40 GHz Wideband Power Amplifier With Transformer-Based High-Order Matching Networks in 28-nm CMOS FD-SOI

Zavarei, Mohammad Javad; Kim, Kyung-Hwan; Song, Ho-Jin

doi:10.1109/lmwc.2022.3168264

Cited by 10 publications

(3 citation statements)

References 15 publications

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“…Our power amplifier demonstrates the highest gain compared with the previous work in Table 1 despite the use of staggering. Both the smalland large-signal bandwidths are competitive among the references in Table 1 besides the FD-SOI power amplifier in reference [29]. With a 1.1 V VDD supply and the power combining method, the P sat and OP 1dB of our power amplifier are impressive besides the work with a 3.3 V/2.2 V supply in references [23,38], respectively.…”

Section: Resultsmentioning

confidence: 86%

“…in which v 2 , i 1 , and i 2 are defined in Figure 2. Compared with an ideal lossless symmetrical MCR, the finite Q parameter of the lossy transformer makes the two amplitude peaks of Z21 not equal anymore [29]. Also, the practical coupling factor k of a lossy transformer is not a constant value compared with an ideal transformer.…”

Section: Wideband Output Matching Network Designmentioning

confidence: 99%

“…Compared with the initial desire with the condition of ω 1 /ω 2 = Q 1 /Q 2 , the two Z21 peaks are not equal anymore. The loss of the transformer affects the Z21 response [29]. Meanwhile, the equivalent R 1 , R 2 , L 1 , L 2 , and k being non-constant with frequency also affects the Z21 response.…”

Section: Input-matching Network Designmentioning

confidence: 99%

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A Wideband Power Amplifier in 65 nm CMOS Covering 25.8 GHz–36.9 GHz by Staggering Tuned MCRs

Wang,

Liu

2023

Electronics

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Broadband millimeter-wave power amplifiers have attracted much attention and have wide applications for 5G communication, satellite communication, radar, sensing, etc. Yet, it is challenging to design a power amplifier with broadband small-signal gain and power performance simultaneously. In this study, a transformer-based symmetrical magnetically coupled resonator (MCR) matching network for broadband output matching and stagger-tuned MCRs are used to achieve both broadband small- and large-signal performance. Also, to enhance the gain for the power amplifier, a three-stage common-source pseudo-differential structure is adopted to mitigate the low-gain issue due to stagger tuning, and the shunt resistors aimed to decrease the Q factor of the MCRs. We used the in-phase two-way current combined with microstrip transmission lines to increase the output power. Designed in 65 nm bulky CMOS technology, the power amplifier presents a 3 dB small-signal gain bandwidth from 25.8 GHz to 36.9 GHz, indicating a peak gain of 25.87 dB at 30.5 GHz. The power amplifier demonstrates a 17.84 dBm saturated output power (Psat) at 31 GHz and a 24.37% peak power added efficiency (PAEmax) at 28 GHz. The power amplifier achieves a flat Psat of 17.44 ± 0.4 dBm, a PAEmax of 22.59 ± 1.78%, and an OP1dB of 13.78 ± 0.31 dBm from 26 GHz to 36 GHz.

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Section: Resultsmentioning

confidence: 86%

Section: Wideband Output Matching Network Designmentioning

confidence: 99%