A 24GHz reflective-type phase shifter with constant loss in 0.18μm CMOS technology

Askari, Mehdi; Kaabi, Hooman; Kavian, Yousef S.

doi:10.1016/j.aeue.2015.04.015

Cited by 12 publications

(7 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…𝜃 𝑠 = arc 𝑡𝑎𝑛( 2𝑍 𝑖𝑛𝑠 /𝑍 𝑠 ) (7) With the OFF-state parameter values calculated, we can compute the required susceptance values (𝑗𝐵 1 and 𝑗𝐵 2 ) by using the even-odd analysis in the ON-state, as shown in Fig. 3.…”

Section: 𝜃 𝑑 = 𝜃 𝑒2 − 𝜃 𝑒1mentioning

confidence: 99%

“…Phase shifters can be categorized as single-way type and the differential type [3]. The most common implementation of the single-way type is the switched line [4], distributed loaded line [5], [6], reflection type [7], [8] and high pass / low pass configurations [9], [10]. They are well suited for applications where tunable phase shift is required across a certain frequency band.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Inverted-E Type Phase Shifter Using Fixed Stub-Loaded Main Line: Enhanced Bandwidth and Phase Shift Range

Amin,

Liu,

Zhao

et al. 2024

IEEE Access

View full text Add to dashboard Cite

With the aim to enhance the phase shift range and bandwidth of the novel Inverted-E topology for single-bit and multi-bit phase shifters, this work proposes a new structure, wherein the 50Ω Main Transmission Line (MTL) in the Inverted-E topology is replaced by a tunable transmission line with a fixed open circuited stub loaded at its center point. Therefore, offering four design freedoms, precisely the characteristic impedances and electrical lengths of the transmission line and the fixed open circuited stub, that provides it the flexibility to achieve much smaller susceptance values for large phase shifts up to 180º . The required susceptances are realized using three symmetric open or short-circuited stubs, which are loaded to transmission line using switching p-i-n diodes. The fixed open circuited stubs ensure excellent circuit matching to the port impedance of 50Ω in the OFF-state, without the need of any additional matching network. Whereas, the enhanced design flexibility enables the realization of compact dimensions and lower insertion loss. A systematic design procedure is developed, supported by detailed design theory and mathematical formulations, followed by validation through analysis and simulations of typical 22.5º , 45º , 90º and 180º digital phase shifters. For experimental verifications, 90º and 180º designs are manufactured at center frequency of 2.4GHz and a good agreement is observed with theory and simulations. The results indicate compact dimensions of 0.36λg×0.14λg and 0.33λg×0.27λg, corresponding insertion losses of 1.7dB and 2.85dB with phase error less than 1º at center frequency. Moreover, the phase variation is observed to be 2º and 5º , in bandwidths of 400MHz and 100MHz respectively. INDEX TERMSInverted-E type phase shifter, open circuited stubs, p-i-n diodes.

show abstract

Section: 𝜃 𝑑 = 𝜃 𝑒2 − 𝜃 𝑒1mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Inverted-E Type Phase Shifter Using Fixed Stub-Loaded Main Line: Enhanced Bandwidth and Phase Shift Range

Amin,

Liu,

Zhao

et al. 2024

IEEE Access

View full text Add to dashboard Cite

show abstract

“…An efficient MOS-switch should have a low insertion loss in the on-state and a high isolation in the off-state [9,13]. High-frequency CMOS switches are strongly affected by the capacitive feed-through between the input and output.…”

Section: Shunt Switch Optimizationmentioning

confidence: 99%

“…This can affect the main design specifications of the attenuator such as minimum/maximum attenuation, attenuation flatness, attenuation range, and source/load impedance matching [8]. An efficient attenuator should have a small loss in maximum attenuation setting (attenuation state) and a high isolation in minimum attenuation setting (reference state) [9]. The attenuation flatness is defined as the ratio between the attenuations at two different frequencies [1].…”

Section: Introductionmentioning

confidence: 99%

A Wideband 5-bit Switched Step Attenuator in 0.18 µm CMOS Technology

Askari

Kaabi

Kavian

et al. 2015

IETE Journal of Research

Self Cite

View full text Add to dashboard Cite

In this paper, a DC-20GHz 5-bit step T-attenuator including five cascaded single-bit switched Tattenuators is presented. The attenuation can be digitally controlled in steps of about 1 dB. To improve the flatness and insertion loss of the attenuator, nMOS switches with optimized switching performance are used as shunt switches. The circuit is implemented in a standard 0.18 mm CMOS (complementary metal-oxide semiconductor) technology. Over DC-20GHz, the proposed circuit shows the attenuation flatness of <2.6 dB (average of 2.1 dB) and attenuation range of 27À29.5 dB. Its insertion loss is 1.4À2.4 dB in the entire frequency range. Furthermore, the simulation results confirm good impedance matching and reasonable phase imbalance. The worst-case return loss is better than 11 dB with the rms (root mean square) phase imbalance of <16 o (average of 13.8 o ).

show abstract

“…Phase shifter has been utilized in several microwave applications such as in sub-component of Butler Matrix (BM) [1], phase modulators and phased array antenna [2][3][4]. Phase shifter provides a constant phase difference between the outputs of two ports over designated frequency range.…”

Section: Introductionmentioning

confidence: 99%

Design of ultra wideband phase shifter with improved scattering parameter performances

Zaidel

Rahim

Seman

et al. 2016

2016 International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES)

View full text Add to dashboard Cite

Abstract-Aiming to achieve Ultra Wideband (UWB) performance, this paper presents an improvement of the squareshaped phase shifter design, which covers from 2.8 GHz to 10.6 GHz by implementing step impedances in order to improve the impedance matching of the phase shifter, whilst leads to better scattering parameter results. The phase shifter design is formed by using multilayer technique where 3 layers of conductors are interleaved with 2 layers of substrates between each of the conductor's layer. This technique ensures the phase shifter design to be small in size. Computer Simulation Technology (CST) Microwave Studio is used in developing the design and optimization stage. Meanwhile the measurement is done by using Vector Network Analyzer (VNA). The square-shaped phase shifter with step impedances enhances the bandwidth up to 34% as compared to the conventional square-shaped phase shifter. Additionally, analysis on air gap and alignment is also presented in order to show how both conditions affect the performance of the proposed phase shifter design.

show abstract

A 24GHz reflective-type phase shifter with constant loss in 0.18μm CMOS technology

Cited by 12 publications

References 30 publications

Inverted-E Type Phase Shifter Using Fixed Stub-Loaded Main Line: Enhanced Bandwidth and Phase Shift Range

Inverted-E Type Phase Shifter Using Fixed Stub-Loaded Main Line: Enhanced Bandwidth and Phase Shift Range

A Wideband 5-bit Switched Step Attenuator in 0.18 µm CMOS Technology

Design of ultra wideband phase shifter with improved scattering parameter performances

Contact Info

Product

Resources

About