A 23–31 GHz high‐gain GaN low‐noise amplifier using T‐type matching networks and multiple feedback techniques for broadband 5G millimeter‐wave applications

Abstract

A 23-31 GHz three-stage low-noise amplifier (LNA) based on 100 nm gallium nitride-on-Si technology is presented with a total circuit size of 2.0 × 1.4 mm 2 .To achieve an excellent noise figure (NF) and gain, a special inductive dualsource feedback network is used; it contributes to noise matching and input conjugate matching by resonating with the parasitic gate-source capacitance C gs of the transistor. T-type networks with low-quality factor are carefully employed for broadband matching circuits to extend the bandwidth.