A 220 GHz OOK Outphasing Transmitter in 130-nm BiCMOS Technology

Wu, Kefei; Fahs, Bassem; Hella, Mona M.

doi:10.1109/bcicts.2018.8550896

Cited by 11 publications

(5 citation statements)

References 9 publications

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“…T HE TeraFETs, plasmonic field effect transistors (FETs) applied in the terahertz (THz) frequency range, have been proposed since the early 1990s [1], [2], [3]. Over decades they have found wide applications in THz mixers [4], [5], frequency multipliers [6], [7], transceivers [8], [9], imagers and sensors [10], [11], [12], etc. Recent interests include operating TeraFET detectors at high incident power, which could be used to measure the duration and structure of the high-power THz pulses [13].…”

Section: Introductionmentioning

confidence: 99%

TCAD Model for TeraFET Detectors Operating in a Large Dynamic Range

Liu

Shur

2020

IEEE Trans. THz Sci. Technol.

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We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling results are in good agreement with the experimental data for the AlGaAs/InGaAs heterostructure FETs (HFETs) and, to the low end of the dynamic range, with the analytical theory of the TeraFET detectors. The models incorporate the response saturation effect at high intensities of the THz radiation observed in experiments and reveal the physics of the response saturation associated with different mechanisms for different material systems. These mechanisms include the gate leakage, the velocity saturation and the avalanche effect.

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Section: Introductionmentioning

confidence: 99%

TCAD Model for TeraFET Detectors Operating in a Large Dynamic Range

Liu

Shur

2020

IEEE Trans. THz Sci. Technol.

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“…Comparing [22][23][24] with the approach described in this paper, one can notice three main differences. First, the cited designs all refer to mm-wave and sub-THz telecom systems, whereas our circuit is devoted to sensing applications in the UHF to low-GHz frequency range.…”

Section: Discussionmentioning

confidence: 99%

“…State-of-the-art frequency doublers and quadruplers with modulation capability have also been reported at mm-wave and sub-THz frequency ranges [22][23][24]. These frequency multipliers were active, and the signal modulation was achieved using transistors either acting as RF switches or switching on and off the bias of the circuit itself (amplifier or multiplier stages).…”

Section: Introductionmentioning

confidence: 99%

Energy-Efficient Harmonic Transponder Based on On-Off Keying Modulation for Both Identification and Sensing

Palazzi

Roselli

Tentzeris

et al. 2022

Sensors

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This paper presents a novel passive Schottky-diode frequency doubler equipped with an on-off keying (OOK) modulation port to be used in harmonic transponders for both identification and sensing applications. The amplitude modulation of the second-harmonic output signal is achieved by driving a low-frequency MOSFET, which modifies the dc impedance termination of the doubler. Since the modulation signal is applied to the gate port of the transistor, no static current is drained. A proof-of-concept prototype was manufactured and tested, operating at 1.04 GHz. An on/off ratio of 23 dB was observed in the conversion loss of the doubler for an available input power of −10 dBm. The modulation port of the circuit was excited with a square wave (fm up to 15 MHz), and the measured sidebands in the spectrum featured a good agreement with the theory. Then, the doubler was connected to a harmonic antenna system and tested in a wireless experiment for fm up to 1 MHz, showing an excellent performance. Finally, an experiment was conducted where the output signal of the doubler was modulated by a reed switch used to measure the rotational speed of an electrical motor. This work opens the door to a new class of frequency doublers, suitable for ultra low-power harmonic transponders for identification and sensing applications.

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“…For pulse shaped signals, this operation has to be done online and this can be a bottleneck in high speed communications. The reader might be interested to know that very recently other work has been published on the topic of harmonic outphasing: [10] made a OOK outphasing transmitter with a doubler at 220 GHz whereas [11] proposed a distortion compensation scheme for multiplier-last architectures based on outphasing.…”

Section: Harmonic Outphasingmentioning

confidence: 99%

“…To measure modulated signals, the VDI SAX was configured as a 3-port mixer and connected to an oscilloscope, after amplification with a LNA (8)(9)(10)(11)(12). The data was demodulated on the scope using VSA software.…”

Section: B Modulated Measurementsmentioning

confidence: 99%

A 390-GHz Outphasing Transmitter in 28-nm CMOS

Standaert

Reynaert

2020

IEEE J. Solid-State Circuits

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This paper presents a 390 GHz Outphasing Transmitter in 28 nm CMOS. Generating higher order modulation schemes at THz frequencies is very challenging due to the essential nonlinear elements needed to generate signals above Fmax. Harmonic outphasing could provide an answer for transmitters which use a multiplier last topology. The topology addresses both amplitude and phase distortion issues, which are inherent for multiplier-last architectures. The 5-bit on-chip outphasing symbol generator is sufficient to generate modulation schemes from OOK to 16-STAR QAM. The chip is packaged with a direct chip-towaveguide interface thus providing easy RF access through the WR2.2 waveguide interface. The transmitter can deliver a peak measured output power of −16 dBm with a 3 dB IF bandwidth of 16.5 GHz. The maximum achieved data rate was 6 Gbps.

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A 220 GHz OOK Outphasing Transmitter in 130-nm BiCMOS Technology

Cited by 11 publications

References 9 publications

TCAD Model for TeraFET Detectors Operating in a Large Dynamic Range

TCAD Model for TeraFET Detectors Operating in a Large Dynamic Range

Energy-Efficient Harmonic Transponder Based on On-Off Keying Modulation for Both Identification and Sensing

A 390-GHz Outphasing Transmitter in 28-nm CMOS

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