A = 220 - 223

Wide‐Gap Chalcopyrite Solar Cells with Indium Oxide–Based Transparent Back Contacts

“…For solar cells based on the thin-film absorber Cu(In,Ga)Se 2 (CIGS), exclusively n-type transparent conductive oxide (TCO) films have been tested as TBCs so far. This encompasses mainly fluorine-doped SnO 2 (FTO), [1][2][3][4][5][6][7][8] tin-(ITO), [2,6,[8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] or hydrogen-doped (IOH) [23,24] In 2 O 3 , and aluminum-doped ZnO (AZO). [2,5,14,25,26] The solar cells made on such TBCs usually show no clear trend/change in short-circuit current density ( J SC ) and open-circuit voltage (V OC ), but often a pronounced reduction in fill factor (FF) when exchanging the standard opaque Mo back contact with a TCO layer.…”

“…Fonoll-Rubio et al suggested the formation of an In-Se compound when CIGS is grown on ITO at T abs > 480 °C, deteriorating the electrical and optical properties of the TBC. [41] Since others measured decent solar cell characteristics using bare ITO back contacts for T abs up to 600 °C, [16] the evolution of secondary phases obviously depends on the absorber deposition process as well. For further details, Table S1 in Supporting Information lists the important contact properties of all identified works on CIGS-based solar cells with TBCs (not claiming completeness).…”