A 200 W broadband high power amplifier using hybrid power combining network and digital level control

Alekajbaf, Yasin; Masoumi, Nasser; Mohammad-Taheri, Mahmoud; Safavi‐Naeini, Safieddin

doi:10.1002/mmce.22159

Cited by 6 publications

(4 citation statements)

References 43 publications

(87 reference statements)

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“…Port 1 is used as an output terminal with 50 Ω, port 2 is used as an isolated terminal, port 3 and port 4 are used as input terminal with 90 °phase difference. 3-dB directional coupler, works as a power combiner, is a common component in high-power amplifier design process [21,24]. In this case, the parameters of the asymmetrical branch-line coupler are…”

Section: Design Of the Proposed Couplermentioning

confidence: 99%

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A power amplifier by using asymmetrical branch-line coupler

Peng²,

Wang

et al. 2022

IEICE Electron. Express

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In this paper, a novel power amplifier (PA) is proposed. An asymmetrical branch-line coupler is exploited as the output matching circuits of the proposed PA. Meanwhile, by setting the impedance conditions with trade-off in desired pass-band appropriately, impedance matching and output power combination can be realized in a single circuit. A brief analysis of the asymmetrical branch-line coupler is presented. Compared with the traditional high-power PAs design method, this design method can meet the requirement of the miniaturization. To prove the validity of the proposed method, a PA works at 2 GHz is designed, fabricated and measured by using a 10-W gallium nitride (GaN) transistor (CGH40010F). The measured results show that a saturated output power of 42.8-45.2 dBm with a poweradded efficiency of 52.0-62.6% is achieved and a saturated power gain between 7.9 and 10.1dB.

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Section: Design Of the Proposed Couplermentioning

confidence: 99%

“…Generally, traditional high-power PAs in radar system usually consist of the output matching circuits and power combining circuits [21,22,23,24,25]. These two circuits are designed separately, and exploited a good performance in high-power PAs.…”

Section: Introductionmentioning

confidence: 99%

A power amplifier by using asymmetrical branch-line coupler

Peng²,

Wang

et al. 2022

IEICE Electron. Express

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“…Moreover, their long lifetime and ease of maintenance make the design of high‐power amplifiers using single GaN‐HEMT bare‐dies possible and hence make them the right candidate for space applications 1‐4 . Since then, numerous SSPA designs based on GaN HEMTs are reported from lower frequency bands, 5‐13 to X ‐ and Ku ‐bands, 14‐16 and even upper bands 17 …”

Section: Introductionmentioning

confidence: 99%

“…Moreover, their long lifetime and ease of maintenance make the design of high-power amplifiers using single GaN-HEMT bare-dies possible and hence make them the right candidate for space applications. [1][2][3][4] Since then, numerous SSPA designs based on GaN HEMTs are reported from lower frequency bands, [5][6][7][8][9][10][11][12][13] to X-and Ku-bands, [14][15][16] and even upper bands. 17 Different technologies, such as monolithic microwave integrated circuits (MMICs), and hybrid integration techniques based on bare-dies have been used for the realization of high-frequency SSPAs.…”

Section: Introductionmentioning

confidence: 99%

A high‐efficiency 50 W X‐band GaN power amplifier in hybrid MIC technology

Ahmadi

Moazzen

Baee

et al. 2020

Int J RF Microw Comput Aided Eng

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In this paper, the design, fabrication, and measurement results of a two‐stage X‐band highly efficient 50 W power amplifier are presented. In the design approach, two 0.25 μm bare‐die GaN on SiC transistors, where one of them has the largest gate periphery on the market, are chosen. A considerably high saturated power gain of more than 20 dB and better than 40% power‐added efficiency (PAE) are achieved over the 10.9 to 11.1 GHz bandwidth. Modulated measurements demonstrate an average output power of 40 W with good linearity specifications. Thermal assessment from measurement results ensures transistors' durability.

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Breakthrough design of power handling capability‐enhanced slotted oversized substrate‐integrated waveguide power divider/combiner considering corona and thermal effects

Souri,

Masoumi,

Mohammad‐Taheri

2024

IET Microwaves Antenna & Prop

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An analysis and design of a new slotted power divider/combiner (PDC) that utilises an oversized substrate‐integrated waveguide (OS‐SIW) is presented to enhance power handling capability (PHC). It is interesting to note that, the power capability tolerance can be increased by increasing the width of structure and thickness of the substrate, although it may introduce higher‐order modes. The paper is focused on improving PHC of PDC that propagates only the TE10 mode while preventing the propagation of higher‐order modes. Additionally, the PHC of the proposed structure is studied in detail. The air breakdown or the corona effect is a physical phenomenon that limits the Peak Power Handling Capability (PPHC) of a device. In slotted microwave components, the corona effect plays a crucial role in determining the PPHC, and it is closely related to environmental conditions such as pressure. Another limiting factor is self‐heating, which affects the device's Average Power Handling Capability (APHC). The slotted OS‐SIW PDC is designed on Rogers RO4003 laminate with 32mil thickness, offering a low profile with an overall OS‐SIW PDC area of 170 × 55 mm2. The measured results of the fabricated PDC showcase a range of desirable features. Moreover, the proposed structure in power divider mode exhibits significant improvements in APHC compared to those of the conventional Substrate‐Integrated Waveguides structures, with respective enhancements of approximately 8.26% at 10 GHz (with a Fractional Band Width of 58.3%). These advantages are highly beneficial and hold great potential.

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A 200 W broadband high power amplifier using hybrid power combining network and digital level control

Cited by 6 publications

References 43 publications

A power amplifier by using asymmetrical branch-line coupler

A power amplifier by using asymmetrical branch-line coupler

A high‐efficiency 50 W X‐band GaN power amplifier in hybrid MIC technology

Breakthrough design of power handling capability‐enhanced slotted oversized substrate‐integrated waveguide power divider/combiner considering corona and thermal effects

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