A 20 Gbps inductorless CMOS optical receiver for short-distance VCSEL-based 850 nm optical links

Yazaki, Toru; Takai, Toshiaki; Chujo, Norio; Matsushima, Naoki; Ohhata, Kenichi

doi:10.1007/s10470-013-0118-7

Cited by 3 publications

(2 citation statements)

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“…with 1 RC ω 0 = (10) where A and β represent the low-frequency gain of the gain cell and the feedback cell separately, and ω 0 is the dominant pole frequency of each stage. Due to the comparably smaller size of the feedback stage, the parasitic capacitances can be neglected, then the transform function H(s) of the proposed LA can be calculate based mason formula and expressed as ( )…”

Section: Inverter-based Avcf Tiamentioning

confidence: 99%

“…Thereby, optical interconnects have been more attractive in many high-speed transmitting fields. As the first stage immediately located after the photo detector (PD) in optical interconnects system, optical receiver analog front-end circuit (Rx_AFE) converts the weak photocurrent produced by PD into logic-lever voltage signal for postprocessing [10]. Therefore, the quality and speed of the data transmission are directly determined by the performance of Rx_AFE.…”

Section: Introductionmentioning

confidence: 99%

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A 30Gbps 1.25pJ/b CMOS receiver analog front-end with low supply voltage

Zhou

Mao

Xie

et al. 2021

IEICE Electron. Express

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In this paper, a 30 Gbps 1.25 pJ/b optical receiver analog front-end (Rx_AFE) mainly consisting of an active voltage-current feedback transimpedance amplifier (AVCF-TIA) and a staggered active feedback limiting amplifier (LA) is presented. By adopting active voltage-current feedback technique in the proposed TIA, the large input capacitance is well-isolated without the limitation of low supply voltage, and the direct contradiction between transimpedance gain and output pole frequency is alleviated significantly. Meanwhile, the bandwidth is further extended by adopting staggered active feedback technique in the LA designing. Fabricated in a 40 nm bulk-CMOS technology, the presented Rx_AFE exhibits a transimpedance gain of 63.8 dBΩ and a 3-dB bandwidth of 24.3 GHz. From supply voltage of 1.0 V, power dissipation and power efficiency of the circuit are 37.5 mW and 1.25 pJ/b respectively, when 30 Gbps PRBS is operated. The core circuit occupies a chip area of 920 µm × 690 µm.

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Section: Inverter-based Avcf Tiamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%