A 2 kbit array of symmetric self-electrooptic effect devices

Lentine, Anthony L.; McCormick, F. B.; Novotny, R.A.; Chirovsky, L. M. F.; D'Asaro, L.A.; Kopf, R. F.; Kuo, J. M.; Boyd, G. D.

doi:10.1109/68.47040

Cited by 85 publications

(6 citation statements)

References 7 publications

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“…A review of SEED operation is contained in [7]. SEED arrays consisting of 64 64 arrays of modulators were fabricated and tested [8], facilitating the development of optomechanical techniques for manipulating large arrays of light beams.…”

Section: A Multiple Quantum Well (Mqw) Modulatorsmentioning

confidence: 99%

Optoelectronic/VLSI

Goossen¹

1999

IEEE Trans. Adv. Packag.

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Section: A Multiple Quantum Well (Mqw) Modulatorsmentioning

confidence: 99%

Optoelectronic/VLSI

Goossen¹

1999

IEEE Trans. Adv. Packag.

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“…As shown in Fig. 2 [25]. Running very large SEED arrays at very high frame rates may be difficult, however, due to large electrical power dissipation [20].…”

Section: Quantum-well Modulatorsmentioning

confidence: 99%

“…The results for the first six devices are from typical experimental operating conditions. The parameters for the first four devices are from [34], the SEED parameters are from [25], the 1 st GaAs MQW-OASLM parameters are from [29], and the modeled MQW-OASLM parameters are from this work.…”

Section: Performance Comparisonmentioning

confidence: 99%

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Transport modeling of multiple-quantum-well optically addressed spatial light modulators

Smith

Hesselink

1997

Journal of Applied Physics

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Optically addressed spatial light modulators are essential elements in any optical processing system. Applications such as optical image correlation, short pulse auto-correlation, and gated holography require high speed, high resolution devices for use in compact, high throughput systems. Other important device criteria include ease of fabrication and operation. In this work we study the transport dynamics of a new kind of optically addressed spatial light modulator that uses semi-insulating or intrinsic quantum-well material to produce high performance devices without the need for pixellation or complicated device design.In response to an incident intensity pattern, basic device operation occurs through the screening of an applied voltage via the optical generation, transport, and trapping of photocarriers. A field pattern which mimics the incident intensity pattern is produced by the screening process. This generates strong index and absorption holograms via the quantum confined Stark effect. These holograms can be read out simultaneously with a probe beam to provide dynamic read/write operation.Overall device performance is determined by the transport of photocarriers during the field screening process. We have developed a transient, two-dimensional drift-diffusion model to describe both free and well-confined carrier transport as well as nonlinear effects such as velocity saturation and field-dependent carrier emission from quantum wells. Various analytical and numerical results for the internal carrier and space charge distributions, different screening regimes, and relative carrier contributions to the screening process aregiven. An experimental characterization of a GaAs/AlGaAs device using optical IV transmission and photocurrent techniques is also presented and used to verify the main results of the transport model.Analytical and numerical analyses of various transport effects that limit the resolution are also given. We show that, contrary to the results of earlier device models, both the speed response and resolution can be simultaneously optimized using appropriate device design. Using realistic device parameters, frame rates of 100 kHz at 10 mW/cm 2 intensity with 7 \im device resolution are predicted.First, I would like to thank my advisor, Bert Hesselink, for his support and encouragement over these past several years. He gave me a great deal of freedom not only in choosing this topic, but in determining the course of research. He has allowed me to pursue a number of interests, both directly and not so directly, related to this project. It is an opportunity that I have greatly appreciated. I would also like to thank two researchers from AT&T Bell Laboratories who have been of great help: William Coughran who got me started on semiconductor device modeling, and Afshin Partovi who fabricated and generously provided the samples used in our experiments.One of the great things about being in a group as large as ours is that there are always interesting and useful people around. I would especially like t...

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“…2) The minor m y be replaced with an implanted silicide reflector, reducing the total modulator thicknessllAgain, this is only a partial solution and also requires that the silicide be implanted before the silicon processing.113) A tri-level resist technology may be used, where thick resist is spun on the wafer, W t i n g i n a planar surface. A metal layer is deposited on this resist, is patterned, and dry-etching is then used to remove the resist around the pattern.…”

mentioning

confidence: 99%

Integration Of Gaas Modulators To Silicon Ic's By Monolithic And Hybrid Techniques

Goossen¹

IEEE Princeton/Central Jersey Sarnoff Symposium,

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908)949-69 79Optical interconnects between electronic integrated circuit chips (IC's) may alleviate their bandwidth and pinout number requirements. This is especially true if surface-normal photonic elements are used since then large two-dimensional arrays of interconnects may be formed. The benefit of increased communication capacity to the chip is most attractive for silicon VLSI IC's. A likely candidate for the photonic elements are multiple quantum well (MQW) modulators. In a system, an off-chip laser would be split into an array of spots focused on the modulators, whose reflectance is modulated by the on-chip electronics. Surface-emitting lasers are an altemative approach, but have not been pursued by us as vigorously since the modulator system offers global system clocking, and since SEL's have not appeared yet in large arrays (such as modulators havg) with the low thresholds we desire. In addition modulators have been directly grown on s i l i~o n ,~,~ whereas SEL's have not. Here I w i l l review our progress in integrating MQW modulators on silicon chips.Intimate integration of the modulators must be achieved with the transistors (i.e., they must be placed within microns of the electronic device), or else the capacitance of the interconnecting metal lines will degrade the speed advantage that photonics offer. In addition, thousands of modulators should be integrated on the chip to take full advantage of the parallelism of optics. Until recently it appeared that direct heteroepitaxial growth of 111-V MQW modulators on Si ICs offered the best possibility for such integration. We have since determined that flipchip bonding of modulator chips onto silicon ICs may offer a sooner realization, ut the chip level. Heteroepitaxy will still be pursued on a longer time scale, since it offers the opportunity of wafer-scale integration. I will ticit outline our work on heteroepitaxy, in effect summarizing Ref. 5, then discuss ftip-chip bonding.For either technique the transistors must be made first since higher processing temperatures are incurred making them, and also since Ga is a notorious impurity for silicon electronics. We found in [5] that modulators may be grown on Si IC's while retaining the function of the silicon transistors. A silicon IC fax: (908)949-2473 was obtained from a standard 0.9 pm linewidth fabrication line. The modulator functioned, although with reduced performance due to spectral misalignment of the integral mirror with the exciton of the MQW. We then metalized and tested a submicron gate length transistor on the IC and it functioned near the specifications of the fabrication line.The modulator growth was performed on a silicon IC obtained from an AT&T Microelectronics facility.It had individual test CMOS transistors fabricated on it using 0.9 pm l@ewidth rules6 The transistors had gate lengths ranging from 0.75 to 20 pm, however, all had drain and source openings that were 0.9 X 20 pm. The transistors we used were p-channel devices fabricated in n-"tubs" implanted into the p-type silicon waf...

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A 2 kbit array of symmetric self-electrooptic effect devices

Cited by 85 publications

References 7 publications

Optoelectronic/VLSI

Optoelectronic/VLSI

Transport modeling of multiple-quantum-well optically addressed spatial light modulators

Integration Of Gaas Modulators To Silicon Ic's By Monolithic And Hybrid Techniques

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