2012 IEEE International Symposium on Circuits and Systems 2012
DOI: 10.1109/iscas.2012.6272118
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A 2.6nW, 0.5V, 52dB-DR, 4<sup>th</sup>-order G<inf>m</inf>-C BPF: Moving closer to the FoM's fundamental limit

Abstract: A nano-power 4 th -order band-pass filter operating from a 0.5 V supply voltage with an adjustable center frequency, ranging from 250 Hz to 4 kHz (4 octaves), is presented. The filter is constituted from cascadable 2 nd -order circuit cells that are realized by a network of three transistors and two capacitors comprising only one branch of bias current. As a result of the compact low voltage circuit architecture, a dynamic range of 52 dB is obtained, which leads to best figure of merit achieved among other exi… Show more

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Cited by 5 publications
(2 citation statements)
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“…In [3], single transconductor is implemented by a single transistor to realize a bandpass filter with excellent area and power efficiency. In this paper, transconductors are realized by floating-gate transistors to build a fully reconfigurable filter.…”
Section: B Fgt-c Biquadratic Filtermentioning
confidence: 99%
“…In [3], single transconductor is implemented by a single transistor to realize a bandpass filter with excellent area and power efficiency. In this paper, transconductors are realized by floating-gate transistors to build a fully reconfigurable filter.…”
Section: B Fgt-c Biquadratic Filtermentioning
confidence: 99%
“…As a consequence, the obtained AFs will consume high power and produce high output noise depended on the number of transistor s used. An attempt to reduce the circuit complexity of an AF has been reported in [8] by employing the concept of a transistorized filter in a single-branch circuit structure [9]. Although an extremely compact AF circuit was successfully achieved, the input voltage signal swing of the AF circuit is limited to a few tens milivolt only.…”
Section: Introductionmentioning
confidence: 99%