A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS

Xiao-li, XU; Sun, Zheng; Xu, Kangyang; Yang, Xin; Kurniawan, Taufiq Alif; Yoshimasu, Toshihiko

doi:10.1109/rfit.2014.6933241

Cited by 5 publications

(3 citation statements)

References 7 publications

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“…Nevertheless, the designed PA in this work possesses a relatively low PAE of 17.82% compared to the previous results. In Gunasegaran et al (2017) and Xu et al (2014), the PAs can achieve higher PAE of 33.3% and 36.4% because of the implementation of the Linearity Enhancement Technique (Gunasegaran et al, 2017) and are biased in Class-E (Xu et al, 2014) to improve the efficiency. Design in Gunasegaran et al (2021aGunasegaran et al ( , 2021b is able to achieve a high PAE that is 36% by using a stacked power block technique that will reduce the trade-off between linear output power and PAE.…”

Section: Resultsmentioning

confidence: 99%

“…The findings of the comparison between this study and earlier studies produced by other researchers are compiled into a table, as shown in Table 3. The PA used in this study has a gain of 22 dB compared to PAs from Gunasegaran et al (2017), Xu et al (2014), Haridas et al (2009) and Gunasegaran et al (2021a, 2021b), which have gains of 10 dB, 11.8 dB, 11 dB and 10 dB, respectively. The output power of the PA used in this study is 13.28 dBm, which is lower than (Dos Santos et al , 2017) 15 dBm, (Gunasegaran et al , 2017) 15 dBm and (Gunasegaran et al , 2021a, 2021b) 23 dBm, but higher than (Haridas et al , 2009), which is 6.4 dBm.…”

Section: Resultsmentioning

confidence: 99%

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Design of radio frequency power amplifier for 2.45 GHz IoT application using 0.18 µm CMOS technology

Rhaffor

Ang

Mohamed

et al. 2022

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Purpose The purpose of this study is to show that due to the emergence of the Internet of Things (IoT) industry in recent years, the demand for the higher integration of wireless communication systems with a higher data rate of transmission capacity and lower power consumption has increased tremendously. The radio frequency power amplifier (PA) design is getting more challenging and crucial. A PA for a 2.45 GHz IoT application using 0.18 µm complementary metal oxide semiconductor (CMOS) technology is presented in this paper. Design/methodology/approach The design consists of two stages, the driver and output stage, where both use a single-stage common source transistor configuration. In view of performance, the PA can deliver more than 20 dB gain from 2.4 GHz to 2.5 GHz. Findings The maximum output power achieved by PA is 13.28 dBm. As the PA design is targeted for Bluetooth low energy (BLE) transmitter use, a minimum of 10 dBm output power should be achieved by PA to transmit the signal in BLE standard. The PA exhibits a constant output third-order interception point of 18 dBm before PA becomes saturated after 10 dBm output power. The PA shows a peak power added efficiency of 17.82% at the 13.24 dBm output power. Originality/value The PA design exhibits good linearity up to 10 dBm out the PA design exhibits good linearity up to 10 dBm output power without sacrificing efficiency. At the operating frequency of 2.45 GHz, the PA exhibits a stability k-factor, the value of more than 1; thus, the PA design is considered unconditional stable. Besides, the PA shows the s-parameters performance of –7.91 dB for S11, –11.07 dB for S22 and 21.5 dB for S21.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Design of radio frequency power amplifier for 2.45 GHz IoT application using 0.18 µm CMOS technology

Rhaffor

Ang

Mohamed

et al. 2022

View full text Add to dashboard Cite

show abstract

“…The class-E PA [117][118][119][120][121][122][123][124], depicted in Figure 2.10, was developed in order to improve the efficiency of switch-mode PAs by means of zero-voltage switching. This means creating waveforms where the drain voltage is zero at the exact moments when the transistor turns on or off, which is achieved thanks to the parallel capacitance C P and the reactive part of load X L .…”

Section: Class Ementioning

confidence: 99%