A 2.5&amp;#x2013;2.7GHz broadband 40W GaN HEMT Doherty amplifier with higher than 45% drain efficiency for multi-band application

Yoshimura, Natsue; Umeta, Hiroshi; Watanabe, Naoharu; Deguchi, Hiroaki; Ui, Norihiko

doi:10.1109/pawr.2012.6174928

Cited by 11 publications

(1 citation statement)

References 5 publications

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“…The traditional Doherty PAs using GaN-HEMT [21][22][23][24][25] have been studied, and a Doherty PA that achieved an average output power of 33 W in 2.6 GHz applications had a drain efficiency exceeding 46%, but its bandwidth was limited to 80 MHz. 21 The amplifier in 22 was achieved in the 2.5-2.7 GHz frequency range, the peak power exceeded 270 W, the linear gain exceeded 13 dB, and the drain efficiency exceeded 45% at an 8 dB back-off point. A GaN Doherty amplifier with measured efficiency of 47.5% at power back-off levels of 6 dB from the maximum output power of about 87 W at 2.06 GHz was achieved in.…”

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High‐efficiency wideband Doherty power amplifier based on two‐point impedance‐matching circuits

Song

Zhu

et al. 2022

Micro & Optical Tech Letters

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A novel wideband Doherty power amplifier with high-drain efficiency is proposed in this paper. The triode CGH40010F is adopted in carrier amplifier and peak amplifier to realize the power amplification, respectively. The wide bandwidth is achieved by using the two-point impedance matching circuit, which can be applied to achieve good matching of peak output power point and power back-off point at the same time. The drain efficiency at peak output power point is greater than 55.8% and the maximum drain efficiency is 71.3%, while the peak output power is greater than 43.2 dBm (with an error of AE0.7 dBm) from 1.8 to 2.8 GHz. The drain efficiency at 6 dB power back-off point is greater than 45.1% and the maximum drain efficiency is 63.2%.

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