A 2.4 GHz single chip transceiver

Devlin, L.; Buck, Brennan; Clifton, J.C.; Dearn, A.W.; Long, A. R.

doi:10.1109/mcs.1993.247485

Cited by 35 publications

(5 citation statements)

References 3 publications

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“…An active balun that has improved performance over the single-FET balun, and can also potentially provide input matching is the common-gate, common-source pair, consisting of transistors M1 and M2 in Figure 2 [8]. The output from the common-source device provides the 180º phase shift and an appropriate design can yield equal amplitudes.…”

Section: A Active Balunmentioning

confidence: 99%

A CMOS Direct-Digital BPSK Modulator Using an Active Balun and Common-Gate Switches

Jackson

Zheng

Saavedra

2007

2007 IEEE International Symposium on Circuits and Systems (ISCAS)

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-A 0.18 µm CMOS binary phase shift keying (BPSK) modulator circuit is proposed and demonstrated that can achieve high data rates and strong carrier suppression while having low DC power consumption and a very compact layout. The modulator accepts a single-ended microwave signal (2.4 GHz) and converts it to a balanced signal using an active balun. Complementary common-gate switches are then used to select one of the two balun outputs in correspondence with the digital data to produce BPSK modulation. Excellent performance is obtained with measured phase and amplitude errors of less than 1º and 0.1 dB, respectively, and data rates up to 200 Mbps with a carrier frequency of 2.4 GHz. The insertion loss for the modulator is approximately 3 dB. Additionally, the active balun provides input matching and obtains an input reflection coefficient of -13 dB. The circuit layout area is 310 µm x 260 µm and the power consumption is 7.2 mW.

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Section: A Active Balunmentioning

confidence: 99%

A CMOS Direct-Digital BPSK Modulator Using an Active Balun and Common-Gate Switches

Jackson

Zheng

Saavedra

2007

2007 IEEE International Symposium on Circuits and Systems (ISCAS)

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“…This not only increases the system cost but also causes excessive heat generation which reduces the effective and increases the noise temperature. To reduce power consumption, a bias current reuse technique may be employed at a cost of reduced voltage headroom [20]. As can be seen from Fig.…”

Section: Lna Circuit Implementationmentioning

confidence: 99%

Monolithic transformers and their application in a differential CMOS RF low-noise amplifier

Zhou

Allstot

1998

IEEE J. Solid-State Circuits

115

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A 900 MHz low-noise amplifier (LNA) utilizing three monolithic transformers to implement on-chip tuning networks and requiring no external components has been integrated in 2.88 mm 2 in a standard digital 0.6 m CMOS process. A bias current reuse technique is employed to reduce power dissipation, and process-, voltage-, and temperature-tracking biasing techniques are used. At 900 MHz, the LNA dissipates 18 mW from a single 3 V power supply and provides 4.1 dB noise figure, 12.3 dB power gain, 0 0 033.0 dB reverse isolation, and an input 1-dB compression level of 0 0 016 dBm. Analysis and modeling considerations for silicon-based monolithic transformers are presented, and it is shown that a monolithic transformer occupies less die area and provides a higher quality factor than two independent inductors with the same effective inductance in differential applications. I. INTRODUCTION F INE-LINE CMOS technology easily provides high frequency active devices for use in RF applications (e.g., 800 MHz-2.4 GHz), but high quality passive components (e.g., inductors) present serious challenges to integration as exemplified by several recently reported CMOS RF low-noise amplifier (LNA) designs [1]-[4]. Although significant progress toward the integration of high quality inductors including many innovative structures and design techniques has been reported [5]-[9], practical planar monolithic inductors have achieved only moderate performance owing to resistive losses in the metal traces and in the underlying substrate. Monolithic spiral transformers have been used in monolithic microwave integrated circuit and silicon radio-frequency integrated circuit designs to perform impedance matching, signal coupling, phase splitting, etc. Specific applications include low-loss feedback and single-ended-to-differential signal conversion in a 1.9 GHz receiver front end [10], and matching and coupling in an image rejection mixer [11] and in balanced amplifiers [12], [13]. In this paper, we describe a fully differential CMOS 900 MHz LNA that utilizes monolithic transformers [14]. The design is motivated by the fact that an on-chip spiral transformer comprising two coupled inductors occupies less area and Manuscript

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“…Single FET circuits [2] [3]; 2. Common-gate common-source circuits [4][5], and 3. Differential amplifier circuits [6][7].…”

Section: Introductionmentioning

confidence: 99%

Novel active differential phase splitters in RFIC for wireless applications

Fang²,

Lin³

et al.

1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.98CH36182)

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Two novel active differential phase splitters have been designed and fabricated in a GaAs MESFET process. The new circuits employ a concept of feedback to adjust gain and phase unbalance separately and accurately. The active phase splitters feature simplicity, low power supply and wide-band performance. The circuits can provide f 1 dB and 180 f 1 O differential signals within 4 GHz bandwidth, well covering the frequency range currently used for dual mode commercial wireless communications. In narrowband application more accurate balanced differential signals can be achieved by external tuning.

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A 2.4 GHz single chip transceiver

Abstract: A radio frequency identification (RFID

Cited by 35 publications

References 3 publications

A CMOS Direct-Digital BPSK Modulator Using an Active Balun and Common-Gate Switches

A CMOS Direct-Digital BPSK Modulator Using an Active Balun and Common-Gate Switches

Monolithic transformers and their application in a differential CMOS RF low-noise amplifier

Novel active differential phase splitters in RFIC for wireless applications

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