A 1Mb High-Density Toggle-MRAM with Symmetrical Read/Write Operations

ST-MRAM fundamentals, challenges, and applications

“…The second terminal of the M at the top to a conductor that is at read. Most MRAM use the write cu MTJ (write bit line) as the ground alternate architecture using metal allows the MTJ to be isolated fr reducing cross talk between the w and providing more time for the without disturbing a subsequent read For ST-MRAM, the 1T1MTJ a two column conductors, a source li transistor and a bit line connected to the two column conductors, curre through the MTJ with a higher pote and a lower potential applied to the the MTJ with a higher potential app a lower potential applied to the architecture uses a local source line connect a small group of MTJ a current among the unselected bit line Other architectures have been pu potential trade-off between area an 2T2MTJ architecture [13] [14], with reduced gnal than the cross-point e found the best option for 1MTJ approach, however, he MTJ in the architectures it supports as well as how the MTJ itself can balance its properties may have great advanta embedded applications.…”