A 1D Vanadium Dioxide Nanochannel Constructed via Electric‐Field‐Induced Ion Transport and its Superior Metal–Insulator Transition

Abstract

Nanoscale manipulation of materials' physicochemical properties offers distinguished possibility to the development of novel electronic devices with ultrasmall dimension, fast operation speed, and low energy consumption characteristics. This is especially important as the present semiconductor manufacturing technique is approaching the end of miniaturization campaign in the near future. Here, a superior metal-insulator transition (MIT) of a 1D VO nanochannel constructed through an electric-field-induced oxygen ion migration process in V O thin film is reported for the first time. A sharp and reliable MIT transition with a steep turn-on voltage slope of <0.5 mV dec , fast switching speed of 17 ns, low energy consumption of 8 pJ, and low variability of <4.3% is demonstrated in the VO nanochannel device. High-resolution transmission electron microscopy observation and theoretical computation verify that the superior electrical properties of the present device can be ascribed to the electroformation of nanoscale VO nanochannel in V O thin films. More importantly, the incorporation of the present device into a Pt/HfO /Pt/VO /Pt 1S1R unit can ensure the correct reading of the HfO memory continuously for 10 cycles, therefore demonstrating its great possibility as a reliable selector in high-density crossbar memory arrays.

Recent Advances of Quantum Conductance in Memristors

“…[7] It has been demonstrated that the detailed composition of oxygen-deficient filaments depends critically on the adopted oxides as well as programming conditions. Similarly, the filaments in V 2 O 5 memristors were recently affirmed by Xue et al [62] to be VO 2 nanochannels (Figure 3b). Similarly, the filaments in V 2 O 5 memristors were recently affirmed by Xue et al [62] to be VO 2 nanochannels (Figure 3b).…”

“…As such, the negative potential can be used to track the evolution process of oxygen vacancy filaments. [62] Copyright 2017, John Wiley & Sons, Inc. c,d) Metal-rich filaments in Ta 2 O 5 memristors. The 1ω and 2ω patterns are considered to be caused by the accumulated charges (i.e., oxygen ions) near the surface and the stoichiometry variation as well as structural deformation (i.e., oxygen-deficient filaments), respectively.…”

Development of VO2‐Nanoparticle‐Based Metal–Insulator Transition Electronic Ink

“…[10,12] This makes VO 2 a promising material for many practical applications, including sensors, [15] thermochromic smart windows, [16] field effect transistors, [17] radio-frequency (RF) switches, [18] terahertz nanoantennas, [19] reconfigurable antennas, [20] memory, [21] and energy. [30] On the other hand, several bulk nanomaterials in solution processes with different shapes and sizes using sol-gel [31] and hydrothermal synthesis [32] are reported. [30] On the other hand, several bulk nanomaterials in solution processes with different shapes and sizes using sol-gel [31] and hydrothermal synthesis [32] are reported.…”

Memristors with organic‐inorganic halide perovskites

“…CFs formation and dissolution are considered to be originated from the ionic migration and redox reactions driven by the electric field. Depending on the mobile ion species, the filamentary‐type RS can be divided into two categories: electrochemical metallization (ECM) and valence change mechanism (VCM) . A memristor operating through the ECM mechanism contains an electrochemically active metal (such as Ag and Cu) and an electrochemically inert metal (such as Pt and Au) as electrodes .…”