A 19.5-GHz 28-nm Class-C CMOS VCO, With a Reasonably Rigorous Result on 1/<i>f</i> Noise Upconversion Caused by Short-Channel Effects

Franceschin, Alessandro; Andreani, Pietro; Padovan, Fabio; Bassi, Matteo; Bevilacqua, Andrea

doi:10.1109/jssc.2020.2987702

Cited by 62 publications

(22 citation statements)

References 14 publications

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“…The proposed class-C VCO adopts a simple but powerful auto-adaptive bias technique, as summarized in Table 2. Although phase noise is not better than other previous studies, this VCO has comparable less power consumption, wide frequency tuning range, low FoMT and smaller chip area than other class-C VCO studies [7,8,14,16,17]. Here, L(Δf) is phase noise at a specific offset frequency and FTR is frequency tuning range in percent.…”

Section: Measurement Resultsmentioning

confidence: 81%

Low Phase Noise and Wide-Range Class-C VCO Using Auto-Adaptive Bias Technique

Lee

Kim

et al. 2020

Electronics

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This paper proposes a new structure of 24-GHz class-C voltage-controlled oscillator (VCO) using an auto-adaptive bias technique. The VCO in this paper uses a digitally controlled circuit to eliminate the possibility of start-up failure that a class-C structure can have and has low phase noise and a wide frequency range. To expand the frequency tuning range, a 3-bit cap-bank is used and a triple-coupled transformer is used as the core inductor. The proposed class-C VCO implements a 65-nm RF CMOS process. It has a phase noise performance of −105 dBc/Hz or less at 1-MHz offset frequency and the output frequency range is from 22.8 GHz to 27.3 GHz, which consumes 8.3–10.6 mW of power. The figure-of-merit with tuning range (FoMT) of this design reached 191.1 dBc/Hz.

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Section: Measurement Resultsmentioning

confidence: 81%

Low Phase Noise and Wide-Range Class-C VCO Using Auto-Adaptive Bias Technique

Lee

Kim

et al. 2020

Electronics

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“…Class-C oscillator was first introduced in [72] with a thorough analysis of its thermal PN mechanism. However, the theory explaining its excellent flicker PN (see [73]- [76] showing surprisingly good 1/f 3 PN) was not revealed until [49]. In contrast to "symmetrising" the oscillating waveform by V H2 [48], narrowing of conduction angle could decrease the flicker current noise exposure to the asymmetric waveform caused by the 2nd (in nMOS-only class-C) or 3rd (in complementary class-C [77]) harmonic current entering the nonresistive terminations.…”

Section: B Narrowing Of Conduction Anglementioning

confidence: 99%

Oscillator Flicker Phase Noise: A Tutorial

Siriburanon

Staszewski

2021

IEEE Trans. Circuits Syst. II

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“…Many studies have been conducted to improve the reduction in the CMOS VCO phase noise performance caused by the flicker noise. Biasing techniques for core transistors have been widely used to prevent the degradation of the VCO phase noise by the flicker noise of the oscillator core transistors [ 22 , 23 ]. A VCO using core transistors biased at class C operation is a representative technique that reduces the contribution of the flicker noise effect from the core transistor at the output [ 24 , 25 , 26 ].…”

Section: Introductionmentioning

confidence: 99%

Switched-Biasing Techniques for CMOS Voltage-Controlled Oscillator

Kang

Moon

Yang

2021

Sensors

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A voltage-controlled oscillator (VCO) is a key component to generate high-speed clock of mixed-mode circuits and local oscillation signals of the frequency conversion in wired and wireless application systems. In particular, the recent evolution of new high-speed wireless systems in the millimeter-wave frequency band calls for the implementation of the VCO with high oscillation frequency and low close-in phase noise. The effect of the flicker noise on the phase noise of the VCO should be minimized because the flicker noise dramatically increases as the deep-submicron complementary metal-oxide-semiconductor (CMOS) process is scaled down, and the flicker corner frequency also increases, up to several MHz, in the up-to-date CMOS process. The flicker noise induced by the current source is a major factor affecting the phase noise of the VCO. Switched-biasing techniques have been proposed to minimize the effect of the flicker noise at the output of the VCO with biasing AC-coupled signals at the current source of the VCO. Reviewing the advantages and disadvantages reported in the previous studies, it is analyzed which topology to implement the switched-biasing technique is advantageous for improving the performance of the CMOS VCOs.

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A 19.5-GHz 28-nm Class-C CMOS VCO, With a Reasonably Rigorous Result on 1/f Noise Upconversion Caused by Short-Channel Effects

Cited by 62 publications

References 14 publications

Low Phase Noise and Wide-Range Class-C VCO Using Auto-Adaptive Bias Technique

Low Phase Noise and Wide-Range Class-C VCO Using Auto-Adaptive Bias Technique

Oscillator Flicker Phase Noise: A Tutorial

Switched-Biasing Techniques for CMOS Voltage-Controlled Oscillator

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