A 18‐23 GHz power amplifier design using approximate optimal impedance region approach for satellite downlink

Abstract

This paper presents the design procedure of a K-band 0.1 μm GaAs pseudomorphic high electron mobility transistors (pHEMT) monolithic microwave integrated circuit (MMIC) for satellite communication downlinks. The method focuses on the selection and design of the matching network (MN) by applying the Approximate Optimal Impedance Region (AOIR) approach which is a composition of simple mathematical constraints. The AOIR approach overcomes the drawbacks of traditional MN design method which cannot control the reflection coefficient trajectory of the MN precisely. The method formulates the constraints through symbolic-graphic combinations with integrated functions of computer-aided design (CAD) tools. The impedance transformation trajectory of MN is combined to reduce the mismatch and the insertion loss using equations with multiple mathematical constraints to realize the automatic selection of the MN's topology. The AOIR method fully considers the underutilized characteristics of power amplifier (PA) and to maximize its performance in a balanced manner. The MMIC, was designed using the proposed technique, operates in 18 GHz-23 GHz with a gain of 27 dB and has an average P −1 dB of 27 dBm and PAE of 38% under the continuous wave (CW) drive signal.

Critical parameters of gate control in NC-FinFET on GaAs

“…Devices based on GaAs substrates are extensively used for their high electron mobility and wide-bandgap. GaAs is superior when it comes to high electron mobility transistors (HEMT) [43] and low power consumption application [44]. Thus, GaAs substrate is adopted in the NC-FinFET simulation model.…”

Performance optimization of GaAs NCFET with a complex oxide ferroelectric gate ​

“…Devices based on gallium arsenide (GaAs) or gallium nitride (GaN) substrates are widely used for their high electron mobility and wide-bandgap. GaN is superior in the high-power application [8]. However, the severe defect problems make GaN devices unsuitable for low-power applications.…”