A 18.05 ppm/°C, $38.5\ \mu W$ Bandgap Reference Based on Weak Inversion Region Operation Design

This paper presents a 2.15 µW/MHz at the frequency of 64 MHz relaxation oscillator with a dynamic range of frequency from 47.5 MHz to 80 MHz. To reduce the power consumption and improve energy efficiency, this work employs only one comparator and one capacitor to generate the output clock in comparison with conventional relaxation oscillator structures. A total of 50% ± 5% of the duty cycle is obtained for the output clock by implementing an auxiliary comparator. The proposed relaxation oscillator uses the output voltages of an external low-dropout (LDO) voltage and bandgap reference (BGR) for the required supply and reference voltages, respectively. Two current sources are implemented to provide the required currents for trimming the output frequency and driving the comparators. Measurement results indicate that the relaxation oscillator achieves a temperature coefficient (TC) of 130 ppm/°C over a wide temperature range from −25 °C to 135 °C at the frequency of 64 MHz. The relaxation oscillator consumes 115 µA of current at the frequency of 64 MHz under a low-dropout (LDO) voltage of 1.2 V. The proposed relaxation oscillator is analyzed and fabricated in standard 90 nm complementary metal-oxide semiconductor (CMOS) process, and the die area is 130 µm × 90 µm.

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A 18.05 ppm/°C, $38.5\ \mu W$ Bandgap Reference Based on Weak Inversion Region Operation Design

Cited by 3 publications

References 13 publications

A 55nm CMOS, 2.6 and worst case 6.8ppm/°C, 1.2V supply and -85dB PSR curvature compensated bandgap reference circuit for MEMS microphones

A 55nm CMOS, 2.6 and worst case 6.8ppm/°C, 1.2V supply and -85dB PSR curvature compensated bandgap reference circuit for MEMS microphones

A Bandgap Voltage Reference with Self-buffered Loop Control Technology

A 64-MHz 2.15-µW/MHz On-Chip Relaxation Oscillator with 130-ppm/°C Temperature Coefficient

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